KSP06 ,NPN Epitaxial Silicon TransistorKSP05/06KSP05/06Amplifier Transistor• Collector-Emitter Voltage: V = KSP05: 60VCEOKSP06: 80V• Colle ..
KSP06 ,NPN Epitaxial Silicon TransistorKSP05/06KSP05/06Amplifier Transistor• Collector-Emitter Voltage: V = KSP05: 60VCEOKSP06: 80V• Colle ..
KSP06 ,NPN Epitaxial Silicon TransistorKSP05/06KSP05/06Amplifier Transistor• Collector-Emitter Voltage: V = KSP05: 60VCEOKSP06: 80V• Colle ..
KSP06BU ,NPN Epitaxial Silicon TransistorKSP05/06KSP05/06Amplifier Transistor• Collector-Emitter Voltage: V = KSP05: 60VCEOKSP06: 80V• Colle ..
KSP06BU ,NPN Epitaxial Silicon TransistorKSP05/06KSP05/06Amplifier Transistor• Collector-Emitter Voltage: V = KSP05: 60VCEOKSP06: 80V• Colle ..
KSP06TA ,NPN Epitaxial Silicon TransistorKSP05/06KSP05/06Amplifier Transistor• Collector-Emitter Voltage: V = KSP05: 60VCEOKSP06: 80V• Colle ..
LA-101VA , High efficiency, single-digit numeric displays
LA1060 ,Antenna Switching Diversity Circuit for Car-Use FM TunersElectrical Characteristics at Ta=25°C, V =8.0V, f=100kHz sine waveCCRatingsParameter Symbol Conditi ..
LA1060 ,Antenna Switching Diversity Circuit for Car-Use FM TunersFeatures• "Count system"-used, reliable detection of multipathdistortion.• One-tuner type diversity ..
LA1061 ,Antenna Switching ControllerOrdering number : EN3044AMonolithic Linear ICLA1061MAntenna Switching ControllerOverviewPackage Dim ..
LA1061M ,Antenna Switching ControllerBlock DiagramUnit (resistance : Ω)No.3044-2/8LA1061MOperating Characteristic Test CircuitUnit (resi ..
LA1061M ,Antenna Switching ControllerOrdering number : EN3044AMonolithic Linear ICLA1061MAntenna Switching ControllerOverviewPackage Dim ..
KSP05-KSP06-KSP06BU-KSP06TA
NPN Epitaxial Silicon Transistor
KSP05/06 KSP05/06 Amplifier Transistor • Collector-Emitter Voltage: V = KSP05: 60V CEO KSP06: 80V • Collector Dissipation: P (max)=625mW C • Complement to KSP55/56 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector Base Voltage CBO : KSP05 60 V : KSP06 80 V V Collector-Emitter Voltage CEO : KSP05 60 V : KSP06 80 V V Emitter-Base Voltage 4 V EBO I Collector Current 500 mA C P Collector Power Dissipation 625 mW C T Junction Temperature 150 °C J T Storage Temperature -55~150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Emitter Breakdown Voltage I =1mA, I =0 CEO C B : KSP05 60 V : KSP06 80 V BV Emitter-Base Breakdown Voltage I =100μA, I =0 4 V EBO E C I Collector Cut-off Current CBO : KSP05 V =60V, I =0 0.1 μA CB E : KSP06 V =80V, I =0 0.1 μA CB E I Collector Cut-off Current V =60V, I =0 0.1 μA CEO CE B h DC Current Gain V =1V, I =10mA 50 FE CE C V =1V, I =100mA 50 CE C V (sat) Collector-Emitter Saturation Voltage I =100mA, I =10mA 0.25 V CE C B V (on) Base-Emitter On Voltage V =1V, I =100mA 1.2 V BE CE C f Current Gain Bandwidth Product V =2V, I =10mA 100 MHz T CE C f=100MHz * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2002 Rev. A2, September 2002
