KSH50 ,NPN Epitaxial Silicon TransistorApplications• Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” Su ..
KSK595HMTF ,Silicon N-Channel Junction FETApplications• Especially Suited for use in Audio, Telephone Capacitor Microphones3• Excellent Volt ..
KSL0M211 , KSA & KSL Series Sealed Tact Switch
KSL60A01B , Schottky Barrier Diode
KSL60A01B , Schottky Barrier Diode
KSM-603LM , Optic receiver modules
L9950XPTR ,Door actuator driverelectrical characteristics . 143 Application information . . . . . 203.1 Dual power suppl ..
L9950XPTR ,Door actuator driverAbsolute maximum ratings . . 9Table 4. ESD protection . . . 9Table 5. Thermal data ..
L9951 ,DOOR ACTUATOR DRIVERBLOCK DIAGRAMVBATReversePolarityVCCProtectionVSNote: value of capacitor has to be choosen CP carefu ..
L9951 ,DOOR ACTUATOR DRIVERFEATURES■ One half bridge for 7.4A load (r = 150mΩ )on■ Two half bridges for 5A load (r = 200mΩ )on ..
L9951XP ,Rear Door Actuator DriverFunctional description of the SPI . . . . . 224.1 Serial Peripheral Interface (SPI) 224.2 C ..
L9951XPTR ,Rear Door Actuator Driverapplications. Up to two DC motors (I < 3µA, typ. T ≤ 85°C)and two grounded resistive loads can be d ..
KSH50
NPN Epitaxial Silicon Transistor
KSH47/50 KSH47/50 High Voltage and High Reliability D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP47 and TIP50 D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Emitter Voltage CBO : KSH47 350 V : KSH50 500 V V Collector-Emitter Voltage CEO : KSH47 250 V : KSH50 400 V V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 1 A C I Collector Current (Pulse) 2 A CP I Base Current 0.6 A B P Collector Dissipation (T =25°C) 15 W C C Collector Dissipation (T =25°C) 1.56 W a T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) * Collector-Emitter Sustaining Voltage CEO : KSH47 I = 30mA, I = 0 250 V C B : KSH50 400 V I Collector Cut-off Current CEO : KSH47 V = 150V, I = 0 0.2 mA CE B : KSH50 V = 300V, I = 0 0.2 mA CE B I Collector Cut-off Current CES : KSH47 V = 350, V = 0 0.1 mA CE EB : KSH50 V = 500, V = 0 0.1 mA CE EB I Emitter Cut-off Current V = 5V, I = 0 1 mA EBO BE C h * DC Current Gain V = 10V, I = 0.3A 30 150 FE CE C V = 10V, I = 1A 10 CE C V (sat) * Collector-Emitter Saturation Voltage I = 1A, I = 0.2A 1 V CE C B V (sat) * Base-Emitter Saturation Voltage V = 10A, I = 1A 1.5 V BE CE C f Current Gain Bandwidth Product V =10V, I = 0.2A 10 MHz T CE C * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2001 Rev. A3, June 2001
