KSH45H11 ,PNP Epitaxial Silicon TransistorApplications• Load Formed for Surface Mount Application (No Suffix)D-PAK I-PAK11• Straight Lead (I- ..
KSH45H11ITU ,PNP Epitaxial Silicon TransistorApplications• Lead Formed for Surface Mount Application (No Suffix)D-PAK I-PAK11• Straight Lead (I- ..
KSH45H11-ITU ,PNP Epitaxial Silicon TransistorKSH45H11KSH45H11General Purpose Power and Switching Such as Output or Driver Stages in
KSH45H11TF ,PNP Epitaxial Silicon TransistorApplications D-PAK for Surface Mount
KSH45H11TF ,PNP Epitaxial Silicon TransistorApplications• Lead Formed for Surface Mount Application (No Suffix)D-PAK I-PAK11• Straight Lead (I- ..
KSH45H11TM ,PNP Epitaxial Silicon TransistorKSH45H11KSH45H11General Purpose Power and Switching Such as Output or Driver Stages in
L9949-TR ,DOOR ACTUATOR DRIVERL9949DOOR ACTUATOR DRIVER■ ONE FULL BRIDGE FOR 6A LOAD (r = 150mΩ)onMULTIPOWER BCD60III TECHNOLOGY■ ..
L9950 ,DOOR ACTUATOR DRIVERL9950DOOR ACTUATOR DRIVER1
L9950TR ,DOOR ACTUATOR DRIVERFEATURES Figure 1. Package■ One full bridge for 6A load (r = 150mΩ )on■ Two half bridges for 3A loa ..
L9950-TR ,DOOR ACTUATOR DRIVERL9950DOOR ACTUATOR DRIVER1
L9950XP ,Door actuator driverapplications.Up to five DC motors and ■ Seperated half bridges for door lock motorfive grounded res ..
L9950XP ,Door actuator driverFunctional description of the SPI . . . . . 244.1 Serial Peripheral Interface (SPI) 244.2 C ..
KSH45H11
PNP Epitaxial Silicon Transistor
KSH45H11 KSH45H11 General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) D-PAK I-PAK 11 • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular KSE45H 1.Base 2.Collector 3.Emitter • Fast Switching Speeds • Low Collector Emitter Saturation Voltage PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Emitter Voltage - 80 V CEO V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 8 A C I Collector Current (Pulse) - 16 A CP P Collector Dissipation (T =25°C) 20 W C C Collector Dissipation (T =25°C) 1.75 W a T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) Collector-Emitter Sustaining Voltage I = - 30mA, I = 0 - 80 V CEO C B I Collector Cut-off Current V = - 80V, I = 0 - 10 μA CEO CE B I Emitter Cut-off Current V = - 5V, I = 0 - 50 μA EBO BE C h DC Current Gain V = - 1V, I = - 2A 60 FE CE C V = - 1V, I = - 4A 40 CE C V (sat) Collector-Emitter Saturation Voltage I = - 8A, I = - 0.4A - 1 V CE C B V (on) Base-Emitter Saturation Voltage I = - 8A, I = - 0.8A - 1.5 V BE C B f Current Gain Bandwidth Product V = - 10A, I = - 0.5A 40 MHz T CE C C Collector Capacitance V = - 10V, f = 1MHz 230 pF ob CB t Turn ON Time I = - 5A 135 ns ON C I = - I = - 0.5A t Storage Time B1 B2 500 ns STG t Fall Time 100 ns F * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2001 Rev. A3, June 2001
