KSH44H11 ,NPN Epitaxial Silicon TransistorApplications• Load Formed for Surface Mount Application (No Suffix)D-PAK I-PAK11• Straight Lead (I- ..
KSH44H11ITU ,Product informationApplications• Lead Formed for Surface Mount Application (No Suffix)D-PAK I-PAK11• Straight Lead (I- ..
KSH44H11TF ,NPN Epitaxial Silicon TransistorKSH44H11KSH44H11General Purpose Power and Switching Such as Output or Driver Stages in
KSH44H11TF ,NPN Epitaxial Silicon TransistorKSH44H11KSH44H11General Purpose Power and Switching Such as Output or Driver Stages in
KSH44H11TM ,NPN Epitaxial Silicon TransistorApplications• Lead Formed for Surface Mount Application (No Suffix)D-PAK I-PAK11• Straight Lead (I- ..
KSH45H11 ,PNP Epitaxial Silicon TransistorApplications• Load Formed for Surface Mount Application (No Suffix)D-PAK I-PAK11• Straight Lead (I- ..
L9947S ,QUAD HALF-BRIDGE AND SINGLE HIGH-SIDE DRIVERapplications realized inOVERCURRENT SWITCH OFF AND DIAG-multipower BCD60II technology. Up to three ..
L9949 ,DOOR ACTUATOR DRIVERL9949DOOR ACTUATOR DRIVER■ ONE FULL BRIDGE FOR 6A LOAD (r = 150mΩ)onMULTIPOWER BCD60III TECHNOLOGY■ ..
L9949TR ,DOOR ACTUATOR DRIVERBLOCK DIAGRAMV V (battery)CC SCMOUT1Me.g. for mirror retractFull bridgeor door latchOUT2DIDOOUT3Mm ..
L9949-TR ,DOOR ACTUATOR DRIVERL9949DOOR ACTUATOR DRIVER■ ONE FULL BRIDGE FOR 6A LOAD (r = 150mΩ)onMULTIPOWER BCD60III TECHNOLOGY■ ..
L9950 ,DOOR ACTUATOR DRIVERL9950DOOR ACTUATOR DRIVER1
L9950TR ,DOOR ACTUATOR DRIVERFEATURES Figure 1. Package■ One full bridge for 6A load (r = 150mΩ )on■ Two half bridges for 3A loa ..
KSH44H11
NPN Epitaxial Silicon Transistor
KSH44H11 KSH44H11 General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) D-PAK I-PAK 11 • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular KSE44H 1.Base 2.Collector 3.Emitter • Fast Switching Speeds • Low Collector Emitter Saturation Voltage NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Emitter Voltage 80 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 8 A C I Collector-Current (Pulse) 16 A CP P Collector Dissipation (T =25°C) 20 W C C Collector Dissipation (T =25°C) 1.75 W a T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) * Collector-Emitter Sustaining Voltage I = 30mA, I = 0 80 V CEO C B I Collector Cut-off Current V = 80V, I = 0 10 μA CEO CE B I Emitter Cut-off Current V = 5V, I = 0 50 μA EBO BE C h DC Current Gain V = 1V, I = 2A 60 FE CE C V = 1V, I = 4A 40 CE C V (sat) Collector-Emitter Saturation Voltage I = 8A, I = 0.4A 1 V CE C B V (on) Base-Emitter ON Voltage I = 8A, I = 0.8A 1.5 V BE C B f Current Gain Bandwidth Product V = 10V, I = 0.5A 50 MHz T CE C C Output Capacitance V =10V, f = 1MHz 130 pF ob CB t Turn ON Time I = 5A 300 ns ON C I = - I = 0.5A t Storage Time B1 B2 500 ns STG t Fall Time 140 ns F * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2001 Rev. A2, June 2001
