KSH42C ,PNP Epitaxial Silicon TransistorApplications• Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” Su ..
KSH42CTF ,PNP Epitaxial Silicon TransistorKSH42CKSH42CGeneral Purpose Amplifier Low Speed Switching
KSH44H11 ,NPN Epitaxial Silicon TransistorApplications• Load Formed for Surface Mount Application (No Suffix)D-PAK I-PAK11• Straight Lead (I- ..
KSH44H11ITU ,Product informationApplications• Lead Formed for Surface Mount Application (No Suffix)D-PAK I-PAK11• Straight Lead (I- ..
KSH44H11TF ,NPN Epitaxial Silicon TransistorKSH44H11KSH44H11General Purpose Power and Switching Such as Output or Driver Stages in
KSH44H11TF ,NPN Epitaxial Silicon TransistorKSH44H11KSH44H11General Purpose Power and Switching Such as Output or Driver Stages in
L9947 ,QUAD HALF-BRIDGE AND SINGLE HIGH-SIDE DRIVERELECTRICAL CHARACTERISTICS ° (VS = 8 to 16V; VCC = 4.5 to 5.5V; Tj = -40 to 150 C;unless other-wise ..
L9947L ,QUAD HALF-BRIDGE AND SINGLE HIGH-SIDE DRIVERELECTRICAL CHARACTERISTICS ° (VS = 8 to 16V; VCC = 4.5 to 5.5V; Tj = -40 to 150 C;unless other-wise ..
L9947S ,QUAD HALF-BRIDGE AND SINGLE HIGH-SIDE DRIVERfunctional description (pag....)|I | Output Current Limitation to 0.67 2 AOUT2 Supply or GND|I | Ou ..
L9947S ,QUAD HALF-BRIDGE AND SINGLE HIGH-SIDE DRIVERapplications realized inOVERCURRENT SWITCH OFF AND DIAG-multipower BCD60II technology. Up to three ..
L9949 ,DOOR ACTUATOR DRIVERL9949DOOR ACTUATOR DRIVER■ ONE FULL BRIDGE FOR 6A LOAD (r = 150mΩ)onMULTIPOWER BCD60III TECHNOLOGY■ ..
L9949TR ,DOOR ACTUATOR DRIVERBLOCK DIAGRAMV V (battery)CC SCMOUT1Me.g. for mirror retractFull bridgeor door latchOUT2DIDOOUT3Mm ..
KSH42C
PNP Epitaxial Silicon Transistor
KSH42C KSH42C General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP42C D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage -100 V CBO V Collector-Emitter Voltage -100 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current (DC) -6 A C I Collector Current (Pulse) -10 A CP I Base Current -2 A B P Collector Dissipation (T =25°C) 20 W C C Collector Dissipation (T =25°C) 1.75 W a T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) * Collector-Emitter Sustaining Voltage I = - 30mA, I = 0 -100 V CEO C B I Collector Cut-off Current V = -60V, I = 0 -50 μA CEO CE B I Collector Cut-off Current V = -100V, V = 0 -10 μA CES CE BE I Emitter Cut-off Current V = -5V, I = 0 -0.5 mA EBO BE C h * DC Current Gain V = -4V, I = -0.3A 30 FE CE C V = -4V, I = -3A 15 75 CE C V (sat) * Collector-Emitter Saturation Voltage I = -6A, I = -600mA -1.5 V CE C B V (on) * Base-Emitter ON Voltage V = -6A, I = -4A -2 V BE CE C f Current Gain Bandwidth Product V = -10V, I = -500mA 3 MHz T CE C * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2001 Rev. A3, June 2001
