KSH41CTF ,NPN Epitaxial Silicon TransistorApplications• Lead Formed for Surface Mount Application (No Suffix)D-PAK I-PAK11• Straight Lead (I- ..
KSH42C ,PNP Epitaxial Silicon TransistorApplications• Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” Su ..
KSH42CTF ,PNP Epitaxial Silicon TransistorKSH42CKSH42CGeneral Purpose Amplifier Low Speed Switching
KSH44H11 ,NPN Epitaxial Silicon TransistorApplications• Load Formed for Surface Mount Application (No Suffix)D-PAK I-PAK11• Straight Lead (I- ..
KSH44H11ITU ,Product informationApplications• Lead Formed for Surface Mount Application (No Suffix)D-PAK I-PAK11• Straight Lead (I- ..
KSH44H11TF ,NPN Epitaxial Silicon TransistorKSH44H11KSH44H11General Purpose Power and Switching Such as Output or Driver Stages in
L9942XP1TR ,Stepper Motor Driver for Bipolar Motors with microstepping & programmable current profileFeatures■ Two full bridges for max. 1.3 A load(R = 500 m) DSON■ Programmable current waveform with ..
L9947 ,QUAD HALF-BRIDGE AND SINGLE HIGH-SIDE DRIVERELECTRICAL CHARACTERISTICS ° (VS = 8 to 16V; VCC = 4.5 to 5.5V; Tj = -40 to 150 C;unless other-wise ..
L9947L ,QUAD HALF-BRIDGE AND SINGLE HIGH-SIDE DRIVERELECTRICAL CHARACTERISTICS ° (VS = 8 to 16V; VCC = 4.5 to 5.5V; Tj = -40 to 150 C;unless other-wise ..
L9947S ,QUAD HALF-BRIDGE AND SINGLE HIGH-SIDE DRIVERfunctional description (pag....)|I | Output Current Limitation to 0.67 2 AOUT2 Supply or GND|I | Ou ..
L9947S ,QUAD HALF-BRIDGE AND SINGLE HIGH-SIDE DRIVERapplications realized inOVERCURRENT SWITCH OFF AND DIAG-multipower BCD60II technology. Up to three ..
L9949 ,DOOR ACTUATOR DRIVERL9949DOOR ACTUATOR DRIVER■ ONE FULL BRIDGE FOR 6A LOAD (r = 150mΩ)onMULTIPOWER BCD60III TECHNOLOGY■ ..
KSH41CTF
NPN Epitaxial Silicon Transistor
KSH41C KSH41C General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Application (No Suffix) D-PAK I-PAK 11 • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP41 and TIP41C 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 100 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 6 A C I Collector Current (Pulse) 10 A CP I Base Current 2 A B P Collector Dissipation (T =25°C) 20 W C C Collector Dissipation (T =25°C) 1.75 W a T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) * Collector-Emitter Sustaining Voltage I = 30mA, I = 0 100 V CEO C B I Collector Cut-off Current V = 60V, I = 0 50 μA CEO CE B I Collector Cut-off Current V = 100V, V = 0 10 uA CES CE BE I Emitter Cut-off Current V = 5V, I = 0 0.5 mA EBO BE C h * DC Current Gain V = 4V, I = 0.3A 30 FE CE C V = 4V, I = 3A 15 75 CE C V (sat) * Collector-Emitter Saturation Voltage I = 6A, I = 600mA 1.5 V CE C B V (on) * Base-Emitter On Voltage V = 6A, I = 4A 2 V BE CE C f Current Gain Bandwidth Product V = 10V, I = 500mA 3 MHz T CE C * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2002 Rev. A4, October 2002
