KSH340 ,NPN Epitaxial Silicon TransistorApplications (No Suffix)• Straight Lead (I-PAK, “- I” Suffix)D-PAK I-PAK111.Base 2.Collector ..
KSH340TF ,NPN Epitaxial Silicon TransistorApplications (No Suffix)• Straight Lead (I-PAK, “- I” Suffix)D-PAK I-PAK111.Base 2.Collector ..
KSH350 ,PNP Epitaxial Silicon TransistorApplications (No Suffix)• Straight Lead (I-PAK, “- I” Suffix)D-PAK I-PAK111.Base 2.Collector ..
KSH350 ,PNP Epitaxial Silicon TransistorKSH350KSH350High Voltage Power Transistors D-PAK for Surface Mount
KSH350TF ,PNP Epitaxial Silicon TransistorApplications (No Suffix)• Straight Lead (I-PAK, “- I” Suffix)D-PAK I-PAK111.Base 2.Collector ..
KSH350TM ,PNP Epitaxial Silicon TransistorKSH350KSH350High Voltage Power Transistors D-PAK for Surface Mount
L9942 ,Stepper Motor Driver for Bipolar Motors with microstepping & programmable current profileFunctional description of the logic with SPI . . . . . 214.1 Motor stepping clock input (STEP) ..
L9942XP1 ,Stepper Motor Driver for Bipolar Motors with microstepping & programmable current profileelectrical characteristics . . . . . . . 286.1 Inputs: CSN, CLK, STEP, EN and DI . . . . 286. ..
L9942XP1TR ,Stepper Motor Driver for Bipolar Motors with microstepping & programmable current profileFeatures■ Two full bridges for max. 1.3 A load(R = 500 m) DSON■ Programmable current waveform with ..
L9947 ,QUAD HALF-BRIDGE AND SINGLE HIGH-SIDE DRIVERELECTRICAL CHARACTERISTICS ° (VS = 8 to 16V; VCC = 4.5 to 5.5V; Tj = -40 to 150 C;unless other-wise ..
L9947L ,QUAD HALF-BRIDGE AND SINGLE HIGH-SIDE DRIVERELECTRICAL CHARACTERISTICS ° (VS = 8 to 16V; VCC = 4.5 to 5.5V; Tj = -40 to 150 C;unless other-wise ..
L9947S ,QUAD HALF-BRIDGE AND SINGLE HIGH-SIDE DRIVERfunctional description (pag....)|I | Output Current Limitation to 0.67 2 AOUT2 Supply or GND|I | Ou ..
KSH340
NPN Epitaxial Silicon Transistor
KSH340 KSH340 High Voltage Power Transistors D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 300 V CBO V Collector-Emitter Voltage 300 V CEO V Emitter-Base Voltage 3 V EBO I Collector Current (DC) 0.5 A C I Collector Current (Pulse) 0.75 A CP P Collector Dissipation (T =25°C) 15 W C C Collector Dissipation (T =25°C) 1.56 W a T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) * Collector Emitter Sustaining Voltage I = 1mA, I = 0 300 V CEO C B I Collector Cut-off Current V = 300V, I =0 0.1 mA CEO CB E I Emitter Cut-off Current V = 3V, I = 0 0.1 mA EBO EB C h * DC Current Gain V = 10V, I = 50mA 30 240 FE CE C * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2001 Rev. A3, June 2001
