KSH31-CTF ,NPN Epitaxial Silicon TransistorKSH31/31CKSH31/31CGeneral Purpose Amplifier Low Speed Switching
KSH31CTM ,NPN Epitaxial Silicon TransistorApplications • Lead Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” S ..
KSH31TF ,NPN Epitaxial Silicon TransistorApplications • Lead Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” S ..
KSH32C ,PNP Epitaxial Silicon TransistorKSH32/32CKSH32/32CGeneral Purpose Amplifier Low Speed Switching
KSH32C ,PNP Epitaxial Silicon TransistorApplications• Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” Su ..
KSH32-CTF ,PNP Epitaxial Silicon TransistorApplications• Lead Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” Su ..
L9935013TR ,TWO-PHASE STEPPER MOTOR DRIVERELECTRICAL CHARACTERISTICS (continued)Symbol Parameter Test Condition Min. Typ. Max. UnitSWITCH OFF ..
L9942 ,Stepper Motor Driver for Bipolar Motors with microstepping & programmable current profileFunctional description of the logic with SPI . . . . . 214.1 Motor stepping clock input (STEP) ..
L9942XP1 ,Stepper Motor Driver for Bipolar Motors with microstepping & programmable current profileelectrical characteristics . . . . . . . 286.1 Inputs: CSN, CLK, STEP, EN and DI . . . . 286. ..
L9942XP1TR ,Stepper Motor Driver for Bipolar Motors with microstepping & programmable current profileFeatures■ Two full bridges for max. 1.3 A load(R = 500 m) DSON■ Programmable current waveform with ..
L9947 ,QUAD HALF-BRIDGE AND SINGLE HIGH-SIDE DRIVERELECTRICAL CHARACTERISTICS ° (VS = 8 to 16V; VCC = 4.5 to 5.5V; Tj = -40 to 150 C;unless other-wise ..
L9947L ,QUAD HALF-BRIDGE AND SINGLE HIGH-SIDE DRIVERELECTRICAL CHARACTERISTICS ° (VS = 8 to 16V; VCC = 4.5 to 5.5V; Tj = -40 to 150 C;unless other-wise ..
KSH31CTF-KSH31-CTF-KSH31CTM-KSH31TF
NPN Epitaxial Silicon Transistor
KSH31/31C KSH31/31C General Purpose Amplifier Low Speed Switching Applications • Lead Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP31 and TIP31C D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage CBO : KSH31 40 V : KSH31C 100 V V Collector-Emitter Voltage CEO : KSH31 40 V : KSH31C 100 V V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 3 A C I Collector Current (Pulse) 5 A CP I Base Current 1 A B P Collector Dissipation (T =25°C) 15 W C C Collector Dissipation (T =25°C) 1.56 W a T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) * Collector-Emitter Sustaining Voltage CEO : KSH31 I = 30mA, I = 0 40 V C B : KSH31C 100 V I Collector Cut-off Current CEO : KSH31 V = 40V, I = 0 50 μA CE B : KSH31C V = 60V, I = 0 50 μA CE B I Collector Cut-off Current CES : KSH31 V = 40V, V = 0 20 μA CE BE : KSH31C V = 100V, V = 0 20 μA CE BE I Emitter Cut-off Current V = 5V, I = 0 1 mA EBO BE C h * DC Current Gain V = 4V, I = 1A 25 FE CE C V = 4V, I = 3A 10 50 CE C V (sat) * Collector-Emitter Saturation Voltage I = 3A, I = 375mA 1.2 V CE C B V (on) * Base-Emitter On Voltage V = 4A, I = 3A 1.8 V BE CE C f Current Gain Bandwidth Product V = 10V, I = 500mA 3 MHz T CE C * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2002 Rev. B3, October 2002
