KSH30TF ,PNP Epitaxial Silicon TransistorKSH30/30CKSH30/30CGeneral Purpose Amplifier Low Speed Switching
KSH31 ,NPN Epitaxial Silicon TransistorApplications • Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” S ..
KSH31C ,NPN Epitaxial Silicon TransistorApplications • Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” S ..
KSH31CTF ,NPN Epitaxial Silicon TransistorKSH31/31CKSH31/31CGeneral Purpose Amplifier Low Speed Switching
KSH31-CTF ,NPN Epitaxial Silicon TransistorKSH31/31CKSH31/31CGeneral Purpose Amplifier Low Speed Switching
KSH31CTM ,NPN Epitaxial Silicon TransistorApplications • Lead Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” S ..
L9930 ,DUAL FULL BRIDGEABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitE Clamped Energy at the Switching off 6 (max) mJ ..
L9935 ,TWO-PHASE STEPPER MOTOR DRIVERELECTRICAL CHARACTERISTICS (continued)Symbol Parameter Test Condition Min. Typ. Max. UnitSWITCH OFF ..
L9935013TR ,TWO-PHASE STEPPER MOTOR DRIVERELECTRICAL CHARACTERISTICS (continued)Symbol Parameter Test Condition Min. Typ. Max. UnitSWITCH OFF ..
L9942 ,Stepper Motor Driver for Bipolar Motors with microstepping & programmable current profileFunctional description of the logic with SPI . . . . . 214.1 Motor stepping clock input (STEP) ..
L9942XP1 ,Stepper Motor Driver for Bipolar Motors with microstepping & programmable current profileelectrical characteristics . . . . . . . 286.1 Inputs: CSN, CLK, STEP, EN and DI . . . . 286. ..
L9942XP1TR ,Stepper Motor Driver for Bipolar Motors with microstepping & programmable current profileFeatures■ Two full bridges for max. 1.3 A load(R = 500 m) DSON■ Programmable current waveform with ..
KSH30TF
PNP Epitaxial Silicon Transistor
KSH30/30C KSH30/30C General Purpose Amplifier Low Speed Switching Applications • Lead Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP30 and TIP30C D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage CBO : KSH30 - 40 V : KSH30C - 100 V V Collector-Emitter Voltage CEO : KSH30 - 40 V : KSH30C - 100 V V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 1 A C I Collector Current (Pulse) - 3 A CP I Base Current - 0.4 A B P Collector Dissipation (T =25°C) 15 W C C Collector Dissipation (Ta=25°C) 1.56 W T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) Collector-Emitter Sustaining Voltage CEO : KSH30 I = - 30mA, I = 0 - 40 V C B : KSH30C - 100 V I Collector Cut-off Current CEO : KSH30 V = - 40V, I = 0 - 50 μA CE B : KSH30C V = - 60V, I = 0 - 50 μA CE B I Collector Cut-off Current CES : KSH30 V = - 40V, V = 0 - 20 μA CE BE : KSH30C V = 100V, V = 0 - 20 μA CE BE I Emitter Cut-off Current V = - 5V, I = 0 - 1 mA EBO BE C h * DC Current Gain V = - 4V, I = - 0.2A 40 FE CE C V = - 4V, I = - 1A 15 75 CE C V (sat) * Collector-Emitter Saturation Voltage I = - 1A, I = - 125mA - 0.7 V CE C B V (on) * Base-Emitter On Voltage V = - 4A, I = - 1A - 1.3 V BE CE C f Current Gain Bandwidth Product V = - 10V, I = - 200mA 3 MHz T CE C * Pulse Test: PW≤300ms, Duty Cycle≤2% ©2002 Rev. B3, October 2002
