KSH3055TF ,NPN Epitaxial Silicon TransistorApplications (No Suffix)• Straight Lead (I-PAK, “ -I “ Suffix)D-PAK I-PAK11• Electrically Similar t ..
KSH30TF ,PNP Epitaxial Silicon TransistorKSH30/30CKSH30/30CGeneral Purpose Amplifier Low Speed Switching
KSH31 ,NPN Epitaxial Silicon TransistorApplications • Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” S ..
KSH31C ,NPN Epitaxial Silicon TransistorApplications • Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” S ..
KSH31CTF ,NPN Epitaxial Silicon TransistorKSH31/31CKSH31/31CGeneral Purpose Amplifier Low Speed Switching
KSH31-CTF ,NPN Epitaxial Silicon TransistorKSH31/31CKSH31/31CGeneral Purpose Amplifier Low Speed Switching
L9911I ,Multifunction Smart Regulator with Lamp/Relay Diagnostic DriverFeatures■ Fully monolithic design■ High side field driver■ Thermal protection■ Field short circuit ..
L9925 ,DMOS DUAL FULL BRIDGE DRIVERAbsolute Maximum Ratings are those values beyond whih damage to the device may occur. Functionalope ..
L9930 ,DUAL FULL BRIDGEABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitE Clamped Energy at the Switching off 6 (max) mJ ..
L9935 ,TWO-PHASE STEPPER MOTOR DRIVERELECTRICAL CHARACTERISTICS (continued)Symbol Parameter Test Condition Min. Typ. Max. UnitSWITCH OFF ..
L9935013TR ,TWO-PHASE STEPPER MOTOR DRIVERELECTRICAL CHARACTERISTICS (continued)Symbol Parameter Test Condition Min. Typ. Max. UnitSWITCH OFF ..
L9942 ,Stepper Motor Driver for Bipolar Motors with microstepping & programmable current profileFunctional description of the logic with SPI . . . . . 214.1 Motor stepping clock input (STEP) ..
KSH3055TF
NPN Epitaxial Silicon Transistor
KSH3055 KSH3055 General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ -I “ Suffix) D-PAK I-PAK 11 • Electrically Similar to Popular KSE3055T 1.Base 2.Collector 3.Emitter • DC Current Gain Specified to 10A • High Current Gain - Bandwidth Product: f = 2MHz (MIN), I = 500mA T C NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 70 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 10 A C I Base Current 6 A B P Collector Dissipation (T =25°C) 20 W C C Collector Dissipation (T =25°C) 1.75 W a T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) * Collector-Emitter Sustaining Voltage I = 30mA, I = 0 60 V CEO C B I Collector Cut-off Current V = 30V, I = 0 50 μA CEO CE E I Collector Cut-off Current V = 70V, I = 0 2 mA CBO CB E I Emitter Cut-off Current V = 5V, I = 0 0.5 mA EBO EB C h *DC Current Gain V = 4V, I = 4A 20 100 FE CE C V = 4V, I = 10A 5 CE C V (sat) * Collector-Emitter Saturation Voltage I = 4A, I = 0.4A 1.1 V CE C B I = 10A, I = 3.3A 8 V C B V (on) * Base-Emitter On Voltage V = 4V, I = 4A 1.8 V BE CE C f Current Gain Bandwidth Product V = 10V, I = 500mA 2 MHz T CE C * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2002 Rev. A4, October 2002
