KSH30 ,PNP Epitaxial Silicon TransistorApplications• Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” Su ..
KSH3055TF ,NPN Epitaxial Silicon TransistorApplications (No Suffix)• Straight Lead (I-PAK, “ -I “ Suffix)D-PAK I-PAK11• Electrically Similar t ..
KSH30TF ,PNP Epitaxial Silicon TransistorKSH30/30CKSH30/30CGeneral Purpose Amplifier Low Speed Switching
KSH31 ,NPN Epitaxial Silicon TransistorApplications • Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” S ..
KSH31C ,NPN Epitaxial Silicon TransistorApplications • Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” S ..
KSH31CTF ,NPN Epitaxial Silicon TransistorKSH31/31CKSH31/31CGeneral Purpose Amplifier Low Speed Switching
L9909 ,DC MOTOR DRIVER WITH POSITION CONTROLELECTRICAL CHARACTERISTICS (VCC = 7 to 18V; Tj = -40 to 85°C, unless otherwise specified.)Pin Symbo ..
L9911I ,Multifunction Smart Regulator with Lamp/Relay Diagnostic DriverFeatures■ Fully monolithic design■ High side field driver■ Thermal protection■ Field short circuit ..
L9925 ,DMOS DUAL FULL BRIDGE DRIVERAbsolute Maximum Ratings are those values beyond whih damage to the device may occur. Functionalope ..
L9930 ,DUAL FULL BRIDGEABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitE Clamped Energy at the Switching off 6 (max) mJ ..
L9935 ,TWO-PHASE STEPPER MOTOR DRIVERELECTRICAL CHARACTERISTICS (continued)Symbol Parameter Test Condition Min. Typ. Max. UnitSWITCH OFF ..
L9935013TR ,TWO-PHASE STEPPER MOTOR DRIVERELECTRICAL CHARACTERISTICS (continued)Symbol Parameter Test Condition Min. Typ. Max. UnitSWITCH OFF ..
KSH30
PNP Epitaxial Silicon Transistor
KSH30/30C KSH30/30C General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP30 and TIP30C D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage CBO : KSH30 - 40 V : KSH30C - 100 V V Collector-Emitter Voltage CEO : KSH30 - 40 V : KSH30C - 100 V V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 1 A C I Collector Current (Pulse) - 3 A CP I Base Current - 4 A B P Collector Dissipation (T =25°C) 15 W C C Collector Dissipation (Ta=25°C) 1.56 W T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) Collector-Emitter Sustaining Voltage CEO : KSH30 I = - 30mA, I = 0 - 40 V C B : KSH30C - 100 V I Collector Cut-off Current CEO : KSH30 V = - 40V, I = 0 - 50 μA CE B : KSH30C V = - 60V, I = 0 - 50 μA CE B I Collector Cut-off Current CES : KSH30 V = - 40V, V = 0 - 20 μA CE BE : KSH30C V = 100V, V = 0 - 20 μA CE BE I Emitter Cut-off Current V = - 5V, I = 0 - 1 mA EBO BE C h * DC Current Gain V = - 4V, I = - 0.2A 40 FE CE C V = - 4V, I = - 1A 15 75 CE C V (sat) * Collector-Emitter Saturation Voltage I = - 1A, I = - 125mA - 0.7 V CE C B V (on) * Base-Emitter ON Voltage V = - 4A, I = - 1A - 1.3 V BE CE C f Current Gain Bandwidth Product V = - 10V, I = - 200mA 3 MHz T CE C * Pulse Test: PW≤300ms, Duty Cycle≤2% ©2001 Rev. A3, June 2001
