KSH29CTF ,NPN Epitaxial Silicon TransistorApplications • Lead Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” S ..
KSH29CTF ,NPN Epitaxial Silicon TransistorApplications • Lead Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” S ..
KSH29-CTF ,NPN Epitaxial Silicon TransistorKSH29/29CKSH29/29CGeneral Purpose Amplifier Low Speed Switching
KSH30 ,PNP Epitaxial Silicon TransistorApplications• Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” Su ..
KSH3055TF ,NPN Epitaxial Silicon TransistorApplications (No Suffix)• Straight Lead (I-PAK, “ -I “ Suffix)D-PAK I-PAK11• Electrically Similar t ..
KSH30TF ,PNP Epitaxial Silicon TransistorKSH30/30CKSH30/30CGeneral Purpose Amplifier Low Speed Switching
L9907ND ,MOTOR BRIDGE FOR HEADLIGHT ADJUSTMENTFUNCTIONAL DESCRIPTIONR , R is minimized with extremely low inputINC INFThe L9907N is a power compa ..
L9909 ,DC MOTOR DRIVER WITH POSITION CONTROLABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCC DC battery supply voltage -0.3 to 55 VVCC_t ..
L9909 ,DC MOTOR DRIVER WITH POSITION CONTROLELECTRICAL CHARACTERISTICS (VCC = 7 to 18V; Tj = -40 to 85°C, unless otherwise specified.)Pin Symbo ..
L9911I ,Multifunction Smart Regulator with Lamp/Relay Diagnostic DriverFeatures■ Fully monolithic design■ High side field driver■ Thermal protection■ Field short circuit ..
L9925 ,DMOS DUAL FULL BRIDGE DRIVERAbsolute Maximum Ratings are those values beyond whih damage to the device may occur. Functionalope ..
L9930 ,DUAL FULL BRIDGEABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitE Clamped Energy at the Switching off 6 (max) mJ ..
KSH29CITU-KSH29CTF-KSH29-CTF
NPN Epitaxial Silicon Transistor
KSH29/29C KSH29/29C General Purpose Amplifier Low Speed Switching Applications • Lead Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP29 and TIP29C D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage CBO : KSH29 40 V : KSH29C 100 V V Collector-Emitter Voltage CEO : KSH29 40 V : KSH29C 100 V V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 1 A C I Collector Current (Pulse) 3 A CP I Base Current 0.4 A B P Collector Dissipation (T =25°C) 15 W C C Collector Dissipation (T =25°C) 1.56 W a T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) Collector-Emitter Sustaining Voltage CEO : KSH29 I = 30mA, I = 0 40 V C B : KSH29C 100 V I Collector Cut-off Current CEO : KSH29 V = 40V, I = 0 50 μA CE B : KSH29C V = 60V, I = 0 50 μA CE B I Collector Cut-off Current CES : KSH29 V = 40V, V = 0 20 μA CE BE : KSH29C V = 100V, V = 0 20 μA CE BE I Emitter Cut-off Current V = 5V, I = 0 1 mA EBO BE C h DC Current Gain V = 4V, I = 0.2A 40 FE CE C V = 4V, I = 1A 15 75 CE C V (sat) Collector-Emitter Saturation Voltage I = 1A, I = 125mA 0.7 V CE C B V (on) Base-Emitter On Voltage V = 4A, I = 1A 1.3 V BE CE C f Current Gain Bandwidth Product V = 10V, I = 200mA 3 MHz T CE C ©2002 Rev. A4, October 2002
