KSH2955ITU ,PNP Epitaxial Silicon TransistorApplications (No Suffix)• Straight Lead (I-PAK, “ -I “ Suffix)D-PAK I-PAK11• Electrically Similar t ..
KSH29C ,NPN Epitaxial Silicon TransistorApplications • Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” S ..
KSH29C ,NPN Epitaxial Silicon TransistorKSH29/29CKSH29/29CGeneral Purpose Amplifier Low Speed Switching
KSH29CITU ,NPN Epitaxial Silicon TransistorKSH29/29CKSH29/29CGeneral Purpose Amplifier Low Speed Switching
KSH29CTF ,NPN Epitaxial Silicon TransistorApplications • Lead Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” S ..
KSH29CTF ,NPN Epitaxial Silicon TransistorApplications • Lead Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” S ..
L9904 ,MOTOR BRIDGE CONTROLLERBLOCK DIAGRAM10VSRCPRef erenceVCC-1ST BIAS+11Charge CP=V pumpSTH13CB112fST GH1VCCOvervoltage14Under ..
L9904TR ,MOTOR BRIDGE CONTROLLERBlock Diagram10VSRCPReferenceVCC-1ST BIAS+11Charge CP=V pumpSTH13CB112fST GH1VCCOvervoltage14Underv ..
L9907ND ,MOTOR BRIDGE FOR HEADLIGHT ADJUSTMENTFUNCTIONAL DESCRIPTIONR , R is minimized with extremely low inputINC INFThe L9907N is a power compa ..
L9909 ,DC MOTOR DRIVER WITH POSITION CONTROLABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCC DC battery supply voltage -0.3 to 55 VVCC_t ..
L9909 ,DC MOTOR DRIVER WITH POSITION CONTROLELECTRICAL CHARACTERISTICS (VCC = 7 to 18V; Tj = -40 to 85°C, unless otherwise specified.)Pin Symbo ..
L9911I ,Multifunction Smart Regulator with Lamp/Relay Diagnostic DriverFeatures■ Fully monolithic design■ High side field driver■ Thermal protection■ Field short circuit ..
KSH2955ITU
PNP Epitaxial Silicon Transistor
KSH2955 KSH2955 General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ -I “ Suffix) D-PAK I-PAK 11 • Electrically Similar to Popular KSE2955T 1.Base 2.Collector 3.Emitter • DC Current Gain Specified to 10A • High Current Gain - Bandwidth Product: f = 2MHz (MIN), I = -500mA T C PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage - 70 V CBO V Collector-Emitter Voltage - 60 V CEO V Emitter-Base Voltage - 5 V EBO I Collector Current - 10 A C I Base Current - 6 A B P Collector Dissipation (T =25°C) 20 W C C Collector Dissipation (T =25°C) 1.75 W a T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) * Collector-Emitter Sustaining Voltage I = - 30mA, I = 0 -60 V CEO C B I Collector Cut-off Current V = - 30V, I = 0 - 50 μA CEO CE E I Collector Cut-off Current V = - 70V, I = 0 - 2 mA CBO CB E I Emitter Cut-off Current V = - 5V, I = 0 - 0.5 mA EBO EB C h * DC Current Gain V = - 4V, I = - 4A 20 100 FE CE C V = - 4V, I = -10A 5 CE C V (sat) * Collector-Emitter Saturation Voltage I = - 4A, I = - 0.4A - 1.1 V CE C B I = - 10A, I = - 3.3A - 8 V C B V (on) * Base-Emitter On Voltage V = - 4V, I = - 4A -1.8 V BE CE C f Current Gain Bandwidth Product V = - 10V, I = - 500mA 2 MHz T CE C * Pulse Test: PW≤300ms, Duty Cycle≤2% ©2002 Rev. A4, October 2002
