KSH210TF ,PNP Epitaxial Silicon TransistorApplications (No Suffix)• Straight Lead (I-PAK, “ - I “ Suffix)D-PAK I-PAK111.Base 2.Collector ..
KSH2955 ,PNP Epitaxial Silicon TransistorApplications (No Suffix)• Straight Lead (I-PAK, “ -I “ Suffix)D-PAK I-PAK11• Electrically Similar t ..
KSH2955ITU ,PNP Epitaxial Silicon TransistorApplications (No Suffix)• Straight Lead (I-PAK, “ -I “ Suffix)D-PAK I-PAK11• Electrically Similar t ..
KSH29C ,NPN Epitaxial Silicon TransistorApplications • Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” S ..
KSH29C ,NPN Epitaxial Silicon TransistorKSH29/29CKSH29/29CGeneral Purpose Amplifier Low Speed Switching
KSH29CITU ,NPN Epitaxial Silicon TransistorKSH29/29CKSH29/29CGeneral Purpose Amplifier Low Speed Switching
L9903TR ,MOTOR BRIDGE CONTROLLERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV , V Bootstrap voltage -0.3 to 40 VCB1 CB2I , I ..
L9904 ,MOTOR BRIDGE CONTROLLERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV , V Bootstrap voltage -0.3 to 40 VCB1 CB2I , I ..
L9904 ,MOTOR BRIDGE CONTROLLERBLOCK DIAGRAM10VSRCPRef erenceVCC-1ST BIAS+11Charge CP=V pumpSTH13CB112fST GH1VCCOvervoltage14Under ..
L9904TR ,MOTOR BRIDGE CONTROLLERBlock Diagram10VSRCPReferenceVCC-1ST BIAS+11Charge CP=V pumpSTH13CB112fST GH1VCCOvervoltage14Underv ..
L9907ND ,MOTOR BRIDGE FOR HEADLIGHT ADJUSTMENTFUNCTIONAL DESCRIPTIONR , R is minimized with extremely low inputINC INFThe L9907N is a power compa ..
L9909 ,DC MOTOR DRIVER WITH POSITION CONTROLABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCC DC battery supply voltage -0.3 to 55 VVCC_t ..
KSH210TF
PNP Epitaxial Silicon Transistor
KSH210 KSH210 D-PAK for Surface Mount Applications • High DC Current Gain • Low Collector Emitter Saturation Voltage • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix) D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage - 40 V CBO V Collector-Emitter Voltage - 25 V CEO V Emitter-Base Voltage - 8 V EBO I Collector Current (DC) - 5 A C I Collector Peck Current (Pulse) - 10 A CP I Base Current - 1 A B P Collector Dissipation (T = 25°C) 12.5 W C C Collector Dissipation (T = 25°C) 1.4 W a T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) * Collector-Emitter Sustaining Voltage I = - 10mA, I = 0 -25 V CEO C B I Collector Cut-off Current V = - 40V, I = 0 -100 nA CBO CB E I Emitter Cut-off Current V = - 8V, I = 0 -100 nA EBO EBO C h * DC Current Gain V = - 1V, I = - 500mA 70 FE CE C V = - 1V, I = - 2A 45 180 CE C V = - 2V, I = - 5A 10 CE C V (sat) * Collector-Emitter Saturation Voltage I = - 500mA, I = - 50mA -0.3 V CE C B I = - 2A, I = - 200mA -0.75 V C B I = - 5A, I = - 1A -1.8 V C B V (sat) * Base-Emitter Saturation Voltage I = - 5A, I = - 1A -2.5 V BE C B V (on) * Base-Emitter On Voltage V = - 1V, I = - 2A -1.6 V BE CE C f Current Gain Bandwidth Product V = - 10V, I = - 100mA 65 MHz T CE C C Output Capacitance V = - 10V, I = 0, f = 0.1MHz 120 pF ob CB E * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2002 Rev. A4, October 2002
