KSH200TF ,NPN Epitaxial Silicon TransistorKSH200KSH200D-PAK for Surface Mount
KSH210 ,PNP Epitaxial Silicon TransistorApplications (No Suffix)• Straight Lead (I-PAK, “ - I “ Suffix)D-PAK I-PAK111.Base 2.Collector ..
KSH210TF ,PNP Epitaxial Silicon TransistorApplications (No Suffix)• Straight Lead (I-PAK, “ - I “ Suffix)D-PAK I-PAK111.Base 2.Collector ..
KSH2955 ,PNP Epitaxial Silicon TransistorApplications (No Suffix)• Straight Lead (I-PAK, “ -I “ Suffix)D-PAK I-PAK11• Electrically Similar t ..
KSH2955ITU ,PNP Epitaxial Silicon TransistorApplications (No Suffix)• Straight Lead (I-PAK, “ -I “ Suffix)D-PAK I-PAK11• Electrically Similar t ..
KSH29C ,NPN Epitaxial Silicon TransistorApplications • Load Formed for Surface Mount Application (No Suffix)• Straight Lead (I-PAK, “- I” S ..
L98SI ,OCTAL SERIAL SOLENOID DRIVERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV DC Logic Supply – 0.7 7 VDDV Output Voltage in ..
L9903 ,MOTOR BRIDGE CONTROLLERBLOCK DIAGRAM10VSRCPRef erenceVCC-1ST BIAS+11Charge CP=V pumpSTH13CB112fST GH1VCCOvervoltage14Under ..
L9903TR ,MOTOR BRIDGE CONTROLLERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV , V Bootstrap voltage -0.3 to 40 VCB1 CB2I , I ..
L9904 ,MOTOR BRIDGE CONTROLLERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV , V Bootstrap voltage -0.3 to 40 VCB1 CB2I , I ..
L9904 ,MOTOR BRIDGE CONTROLLERBLOCK DIAGRAM10VSRCPRef erenceVCC-1ST BIAS+11Charge CP=V pumpSTH13CB112fST GH1VCCOvervoltage14Under ..
L9904TR ,MOTOR BRIDGE CONTROLLERBlock Diagram10VSRCPReferenceVCC-1ST BIAS+11Charge CP=V pumpSTH13CB112fST GH1VCCOvervoltage14Underv ..
KSH200TF
NPN Epitaxial Silicon Transistor
KSH200 KSH200 D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix) D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 8 V EBO I Base Current 1 A B I Collector Current (DC) 5 A C I Collector Current (Pulse) 10 A CP P Collector Dissipation (T = 25°C) 12.5 W C C Collector Dissipation (T = 25°C) 1.4 W a T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) * Collector Emitter Sustaining Voltage I =100mA, I =0 25 V CBO C B I Collector Cut-off Current V =40V, I =0 100 nA CEO CB E I Collector Cut-off Current V =8V, I =0 100 nA CBO EBO C I Emitter Cut-off Current V =1V, I =500mA 70 EBO CE C h * DC Current Gain V =1V, I =2A 45 180 FE CE C V =2V, I =5A 10 CE C V (sat) * Collector-Emitter Saturation Voltage I =500mA, I =50mA 0.3 V CE C B 0.75 V I =2A, I =200mA C B I =5A, I =1A 1.8 V C B V (sat) * Base-Emitter Saturation Voltage I =5A, I =2A 2.5 V BE C B V (on) * Base-Emitter On Voltage V =1V, I =2A 1.6 V BE CE C f Current Gain Bandwidth Product V =10V, I =100mA 65 MHz T CE C C Output Capacitance V =10V, I =0, f=0.1MHz 80 pF ob CB E * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2002 Rev. A3, October 2002
