KSH117-ITU ,Product informationApplications (No Suffix)• Straight Lead (I-PAK, “ - I “ Suffix)D-PAK I-PAK11• Electrically Similar ..
KSH122 ,NPN Silicon Darlington TransistorApplications• High DC Current Gain• Built-in a Damper Diode at E-C• Lead Formed for Surface Mount
KSH122TM ,NPN Silicon Darlington TransistorApplications (No Suffix)• Straight Lead (I-PAK, “ - I “ Suffix)D-PAK I-PAK11• Electrically Similar ..
KSH127 ,PNP Silicon Darlington TransistorApplications (No Suffix)• Straight Lead (I-PAK, “ - I “ Suffix)D-PAK I-PAK11• Electrically Similar ..
KSH127TF ,PNP Silicon Darlington TransistorApplications (No Suffix)• Straight Lead (I-PAK, “ - I “ Suffix)D-PAK I-PAK11• Electrically Similar ..
KSH13007 , Switch Mode series NPN silicon Power Transistor
L98SI ,OCTAL SERIAL SOLENOID DRIVERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV DC Logic Supply – 0.7 7 VDDV Output Voltage in ..
L9903 ,MOTOR BRIDGE CONTROLLERBLOCK DIAGRAM10VSRCPRef erenceVCC-1ST BIAS+11Charge CP=V pumpSTH13CB112fST GH1VCCOvervoltage14Under ..
L9903TR ,MOTOR BRIDGE CONTROLLERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV , V Bootstrap voltage -0.3 to 40 VCB1 CB2I , I ..
L9904 ,MOTOR BRIDGE CONTROLLERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV , V Bootstrap voltage -0.3 to 40 VCB1 CB2I , I ..
L9904 ,MOTOR BRIDGE CONTROLLERBLOCK DIAGRAM10VSRCPRef erenceVCC-1ST BIAS+11Charge CP=V pumpSTH13CB112fST GH1VCCOvervoltage14Under ..
L9904TR ,MOTOR BRIDGE CONTROLLERBlock Diagram10VSRCPReferenceVCC-1ST BIAS+11Charge CP=V pumpSTH13CB112fST GH1VCCOvervoltage14Underv ..
KSH117-ITU
Product information
KSH117 KSH117 D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix) D-PAK I-PAK 11 • Electrically Similar to Popular TIP117 1.Base 2.Collector 3.Emitter PNP Silicon Darlington Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Equivalent Circuit C Symbol Parameter Value Units V Collector-Base Voltage - 100 V CBO V Collector-Emitter Voltage - 100 V CEO B V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 2 A C I Collector Current (Pulse) - 4 A CP I Base Current - 50 mA B R1 R2 P Collector Dissipation (T =25°C) 20 W C C E R11 ≅ 0kΩ Collector Dissipation (T =25°C) 1.75 W a R20 ≅ .6kΩ T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) *Collector-Emitter Sustaining Voltage I = - 30mA, I = 0 - 100 V CEO C B I Collector Cut-off Current V = - 50V, I = 0 - 20 μA CEO CE B I Collector Cut-off Current V = - 100V, I = 0 - 20 μA CBO CB E I Emitter Cut-off Current V = - 5V, I = 0 - 2 mA EBO EB C h *DC Current Gain V = - 3V, V = - 0.5A 500 FE CE EB V = - 3V, V = - 2A 1000 12K CE EB V = - 3V, I = - 4A 200 CE C V - 2 V (sat) *Collector-Emitter Saturation Voltage I = -2A, I = - 8mA CE C B I = - 4A, I = - 40mA - 3 V C B V (sat) *Base-Emitter Saturation Voltage I = - 4A, I = - 40mA - 4 V BE C B V (on) *Base-Emitter On Voltage V = - 3A, I = - 2A - 2.8 V BE CE C f Current Gain Bandwidth Product V = -10V, I = - 0.75A 25 MHz T CE C C Output Capacitance V = - 10V, I = 0 200 pF ob CB E f= 0.1MHz * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2002 Rev. A4, October 2002
