KSE702. ,PNP Epitaxial Silicon Darlington TransistorKSE700/701/702/703KSE700/701/702/703Monolithic Construction With Built-in Base-Emitter Resistors• H ..
KSE800 ,NPN Epitaxial Silicon Darlington TransistorKSE800/801/802/803KSE800/801/802/803Monolithic Construction With Built-in Base-Emitter Resistors• H ..
KSE800 ,NPN Epitaxial Silicon Darlington TransistorKSE800/801/802/803KSE800/801/802/803Monolithic Construction With Built-in Base-Emitter Resistors• H ..
KSE800 ,NPN Epitaxial Silicon Darlington TransistorKSE800/801/802/803KSE800/801/802/803Monolithic Construction With Built-in Base-Emitter Resistors• H ..
KSF30A60B , Low Forward Voltage drop Diode
KSF60A60B , FRD - Low Forward Voltage Drop
L9823 ,OCTAL LOW-SIDE DRIVER FOR BULB, RESISTIVE AND INDUCTIVE LOADS WITH SERIAL INPUT CONTROL, OUTPUT PROTECTION AND DIAGNOSTICBLOCK DIAGRAMV16 DDSFPDOUT0-15 OL0+ 24VDG=IOLCSBGateQ010Q0ControlQ1+Q2 I 0SCB -Q3Over-Q4OT0 Tempera ..
L9823013TR ,OCTAL LOW-SIDE DRIVER FOR BULB, RESISTIVE AND INDUCTIVE LOADS WITH SERIAL INPUT CONTROL, OUTPUT PROTECTION AND DIAGNOSTICBLOCK DIAGRAMV16 DDSFPDOUT0-15 OL024+VDG=IOLCSBGateQ010Q0ControlQ1+IQ2 0-SCBQ3Over-Q4Temperature +O ..
L9825 ,OCTAL LOW-SIDE DRIVER FOR RESISTIVE AND INDUCTIVE LOADS WITH SERIAL/PARALLEL INPUT CONTROL,OUTPUT PROTECTION AND DIAGNOSTICL9825Octal Low-side Driver For Resistive and Inductive Loads WithSerial / Parallel Input Control, O ..
L9825 ,OCTAL LOW-SIDE DRIVER FOR RESISTIVE AND INDUCTIVE LOADS WITH SERIAL/PARALLEL INPUT CONTROL,OUTPUT PROTECTION AND DIAGNOSTICBLOCK DIAGRAMVCCVCC OUT1NON113IS OL2Latch / DriverQ1R+Diag1Fault Latch - VDGCH1NON2OUT2VQ2CC CH2Dia ..
L9825TR ,OCTAL LOW-SIDE DRIVER FOR RESISTIVE AND INDUCTIVE LOADS WITH SERIAL/PARALLEL INPUT CONTROL,OUTPUT PROTECTION AND DIAGNOSTICBLOCK DIAGRAMVCCVCC OUT1NON113IS OL2Latch / DriverQ1R+Diag1Fault Latch - VDGCH1NON2OUT2VCC Q2CH2Dia ..
L9825TR ,OCTAL LOW-SIDE DRIVER FOR RESISTIVE AND INDUCTIVE LOADS WITH SERIAL/PARALLEL INPUT CONTROL,OUTPUT PROTECTION AND DIAGNOSTICL9825Octal Low-side Driver For Resistive and Inductive Loads WithSerial / Parallel Input Control, O ..
KSE702-KSE702.
PNP Epitaxial Silicon Darlington Transistor
KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in Base- Emitter Resistors • High DC Current Gain : h = 750 (Min.) @ I = -1.5 and -2.0A DC FE C • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Equivalent Circuit C Sym- Unit Parameter Value bol s V Collector- Base Voltage : KSE700/701 - 60 V CBO : KSE702/703 - 80 V B V Collector-Emitter Voltage : KSE700/701 - 60 V CEO : KSE702/703 - 80 V V Emitter- Base Voltage - 5 V EBO I Collector Current - 4 A R1 R2 C I Base Current - 0.1 A B E R11 ≅ 0kΩ P Collector Dissipation (T =25°C) 40 W R20 ≅ .6kΩ C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units BV Collector-Emitter Breakdown Voltage CEO : KSE700/701 I = - 10mA, I = 0 -60 V C B : KSE702/703 -80 V I Collector Cut-off Current CEO : KSE700/701 V = - 60V, I = 0 -100 μA CE B : KSE702/703 V = - 80V, I = 0 -100 μA CE B I Collector Cut-off Current V = Rated BV , I = 0 -100 μA CBO CB CEO E V = Rated BV , I = 0 -500 μA CB CEO E @T = 100°C C I Emitter Cut-off Current V = - 5V, I = 0 -2 mA EBO BE C h DC Current Gain FE : KSE700/702 V = - 3V, I = - 1.5A 750 CE C : KSE701/703 V = - 3V, I = - 2A 750 CE C : ALL DEVICES V = - 3V, I = - 4A 100 CE C V (sat) Collector-Emitter Saturation Voltage CE : KSE700/702 I = - 1.5A, I = - 30mA -2.5 V C B : KSE701/703 I = - 2A, I = - 40mA -2.8 V C B : ALL DEVICES I = - 4A, I = - 40mA -3 V C B V (on) Base-Emitter On Voltage BE : KSE700/702 V = - 3V, I = - 1.5A -1.2 V CE C : KSE701/703 V = - 3V, I = - 2A -2.5 V CE C : ALL DEVICES V = - 3V, I = - 4A -3 V CE C ©2001 Rev. A2, June 2001
