KSE44H11TU ,NPN Epitaxial Silicon TransistorKSE44H SeriesKSE44H SeriesGeneral Purpose Power Switching
KSE45H11 ,PNP Epitaxial Silicon TransistorKSE45H SeriesKSE45H SeriesGeneral Purpose Power Switching
KSE45H11TU ,PNP Epitaxial Silicon TransistorApplications• Low Collector-Emitter Saturation Voltage: V (sat) = -1V (MAX)@-8ACE• Fast Switching S ..
KSE700S ,PNP Epitaxial Silicon Darlington TransistorKSE700/701/702/703KSE700/701/702/703Monolithic Construction With Built-in Base-Emitter Resistors• H ..
KSE702 ,PNP Epitaxial Silicon Darlington TransistorKSE700/701/702/703KSE700/701/702/703Monolithic Construction With Built-in Base-Emitter Resistors• H ..
KSE702. ,PNP Epitaxial Silicon Darlington TransistorKSE700/701/702/703KSE700/701/702/703Monolithic Construction With Built-in Base-Emitter Resistors• H ..
L9822EPD013TR ,OCTAL SERIAL SOLENOID DRIVERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV DC Logic Supply – 0.7 7 VCCV Output Voltage – ..
L9822N ,OCTAL SERIAL SOLENOID DRIVERELECTRICAL CHARACTERISTICS (Continued)Symbol Parameter Test Conditions Min. Typ. Max. UnitINPUT BUF ..
L9823 ,OCTAL LOW-SIDE DRIVER FOR BULB, RESISTIVE AND INDUCTIVE LOADS WITH SERIAL INPUT CONTROL, OUTPUT PROTECTION AND DIAGNOSTICBLOCK DIAGRAMV16 DDSFPDOUT0-15 OL0+ 24VDG=IOLCSBGateQ010Q0ControlQ1+Q2 I 0SCB -Q3Over-Q4OT0 Tempera ..
L9823013TR ,OCTAL LOW-SIDE DRIVER FOR BULB, RESISTIVE AND INDUCTIVE LOADS WITH SERIAL INPUT CONTROL, OUTPUT PROTECTION AND DIAGNOSTICBLOCK DIAGRAMV16 DDSFPDOUT0-15 OL024+VDG=IOLCSBGateQ010Q0ControlQ1+IQ2 0-SCBQ3Over-Q4Temperature +O ..
L9825 ,OCTAL LOW-SIDE DRIVER FOR RESISTIVE AND INDUCTIVE LOADS WITH SERIAL/PARALLEL INPUT CONTROL,OUTPUT PROTECTION AND DIAGNOSTICL9825Octal Low-side Driver For Resistive and Inductive Loads WithSerial / Parallel Input Control, O ..
L9825 ,OCTAL LOW-SIDE DRIVER FOR RESISTIVE AND INDUCTIVE LOADS WITH SERIAL/PARALLEL INPUT CONTROL,OUTPUT PROTECTION AND DIAGNOSTICBLOCK DIAGRAMVCCVCC OUT1NON113IS OL2Latch / DriverQ1R+Diag1Fault Latch - VDGCH1NON2OUT2VQ2CC CH2Dia ..
KSE44H11-KSE44H11TU
NPN Epitaxial Silicon Transistor
KSE44H Series KSE44H Series General Purpose Power Switching Applications • Low Collector-Emitter Saturation Voltage : V (sat) = 1V (Max.) @ 8A CE • Fast Switching Speeds • Complement to KSE45H TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Emitter Voltage : KSE44H 1,2 30 V CEO : KSE44H 4,5 45 V : KSE44H 7,8 60 V : KSE44H 10,11 80 V V Emitter- Base Voltage 5 V EBO I Collector Current (DC) 10 A C I *Collector Current (Pulse) 20 A CP P Collector Dissipation (T =25°C) 50 W C C P Collector Dissipation (T =25°C) 1.67 W C a T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = Rated V , V = 0 10 μA CES CE CEO EB I Emitter Cut-off Current V = 5V, I = 0 100 μA EBO EB C h *DC Current Gain FE : KSE44H 1,4,7,10 V = 1V, I = 2A 35 CE C : KSE44H 2,5,8,11 60 V (sat) *Collector-Emitter Saturation Voltage CE : KSE44H 1, 4, 7 10 I = 8A, I = 0.8A 1 V C B : KSE44H 2, 5, 8,11 I = 8A, I = 0.4A 1 V C B V (sat) *Base-Emitter Saturation Voltage I = 8A, I = 0.8A 1.5 V BE C B f Current Gain Bandwidth Product V = 10V, I = 0.5A 50 MHz T CE C C Output Capacitance V = 10V, f = 1MHz 130 pF ob CB t Turn ON Time V =20V, I = 5A 300 ns ON CC C I = - I = 0.5A t Storage Time B1 B2 500 ns STG t Fall Time 140 ns F * Pulse test: PW≤300μs, Duty cycle≤2% ©2001 Rev. A1, June 2001
