KSE350S ,PNP Epitaxial Silicon TransistorApplications• High Collector-Emitter Breakdown Voltage • Suitable for Transformer• Complement to KS ..
KSE44H11 ,NPN Epitaxial Silicon TransistorApplications• Low Collector-Emitter Saturation Voltage : V (sat) = 1V (Max.) @ 8ACE• Fast Switching ..
KSE44H11TU ,NPN Epitaxial Silicon TransistorKSE44H SeriesKSE44H SeriesGeneral Purpose Power Switching
KSE45H11 ,PNP Epitaxial Silicon TransistorKSE45H SeriesKSE45H SeriesGeneral Purpose Power Switching
KSE45H11TU ,PNP Epitaxial Silicon TransistorApplications• Low Collector-Emitter Saturation Voltage: V (sat) = -1V (MAX)@-8ACE• Fast Switching S ..
KSE700S ,PNP Epitaxial Silicon Darlington TransistorKSE700/701/702/703KSE700/701/702/703Monolithic Construction With Built-in Base-Emitter Resistors• H ..
L9822E ,OCTAL SERIAL SOLENOID DRIVERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV DC Logic Supply – 0.7 7 VCCV Output Voltage – ..
L9822EPD ,OCTAL SERIAL SOLENOID DRIVERL9822E®OCTAL SERIAL SOLENOID DRIVER. EIGHT LOW R DMOS OUTPUTS DSonMULTIPOWER BCD TECHNOLOGY(0.5Ω AT ..
L9822EPD013TR ,OCTAL SERIAL SOLENOID DRIVERELECTRICAL CHARACTERISTICS (Continued)Symbol Parameter Test Conditions Min. Typ. Max. UnitINPUT BUF ..
L9822EPD013TR ,OCTAL SERIAL SOLENOID DRIVERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV DC Logic Supply – 0.7 7 VCCV Output Voltage – ..
L9822N ,OCTAL SERIAL SOLENOID DRIVERELECTRICAL CHARACTERISTICS (Continued)Symbol Parameter Test Conditions Min. Typ. Max. UnitINPUT BUF ..
L9823 ,OCTAL LOW-SIDE DRIVER FOR BULB, RESISTIVE AND INDUCTIVE LOADS WITH SERIAL INPUT CONTROL, OUTPUT PROTECTION AND DIAGNOSTICBLOCK DIAGRAMV16 DDSFPDOUT0-15 OL0+ 24VDG=IOLCSBGateQ010Q0ControlQ1+Q2 I 0SCB -Q3Over-Q4OT0 Tempera ..
KSE350S
PNP Epitaxial Silicon Transistor
KSE350 KSE350 High Voltage General Purpose Applications • High Collector-Emitter Breakdown Voltage • Suitable for Transformer • Complement to KSE340 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage - 300 V CBO V Collector-Emitter Voltage - 300 V CEO V Emitter-Base Voltage - 5 V EBO I Collector Current - 500 mA C P Collector Dissipation (T =25°C) 20 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units BV Collector-Emitter Breakdown Voltage I = - 1mA, I = 0 -300 V CEO C B I Collector Cut-off Current V = - 300V, I = 0 -100 μA CBO CB E I Emitter Cut-off Current V = - 3V, I = 0 -100 μA EBO BE C h DC Current Gain V = - 10V, I = - 50mA 30 240 FE CE C ©2000 Fairchild Semiconductor International Rev. A1, December 2000
