KSE3055TTU ,NPN Silicon TransistorApplications• DC Current Gain Specified to I =10AC • High Current Gain-Bandwidth Product : f = 2MHz ..
KSE3055TTU ,NPN Silicon TransistorKSE3055TKSE3055TGeneral Purpose and Switching
KSE340 ,NPN Epitaxial Silicon TransistorKSE340KSE340High Voltage General Purpose
KSE340. ,NPN Epitaxial Silicon TransistorApplications• High Collector-Emitter Breakdown Voltage • Suitable for Transformer• Complement to KS ..
KSE340S ,NPN Epitaxial Silicon TransistorKSE340KSE340High Voltage General Purpose
KSE340STU ,NPN Epitaxial Silicon TransistorApplications• High Collector-Emitter Breakdown Voltage • Suitable for Transformer• Complement to KS ..
L9820 ,HIGH SIDE DRIVERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Max Forward Voltage 50 VdcSI Reverse Bias Curr ..
L9820 ,HIGH SIDE DRIVERL9820HIGH SIDE DRIVERADVANCE DATAOPERATING SUPPLY VOLTAGE UP TO 25VMULTIPOWER BCD TECHNOLOGYDC CURR ..
L9820D ,HIGH SIDE DRIVERL9820HIGH SIDE DRIVERADVANCE DATAOPERATING SUPPLY VOLTAGE UP TO 25VMULTIPOWER BCD TECHNOLOGYDC CURR ..
L9820D013TR ,HIGH SIDE DRIVERL9820®HIGH SIDE DRIVEROPERATING SUPPLY VOLTAGE UP TO 25VMULTIPOWER BCD TECHNOLOGYDC CURRENT 0.3AR < ..
L9821 ,HIGH SIDE DRIVERABSOLUTE MAXIMUM RATINGSSymbol Parameter ValueV Max Forward Voltage 50VdcSPositive Transient Peak V ..
L9822E ,OCTAL SERIAL SOLENOID DRIVERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV DC Logic Supply – 0.7 7 VCCV Output Voltage – ..
KSE3055TTU
NPN Silicon Transistor
KSE3055T KSE3055T General Purpose and Switching Applications • DC Current Gain Specified to I =10A C • High Current Gain-Bandwidth Product : f = 2MHz (Min.) T TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector -Base Voltage 70 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 10 A C I Base Current 6 A B P Collector Dissipation (T =25°C) 75 W C C Collector Dissipation (T =25°C) 0.6 W a T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units BV Collector-Emitter Breakdown Voltage I = 200mA, I = 0 60 V CEO C B I Collector Cut-off Current V = 30V, I = 0 700 μA CEO CE B I Collector Cut-off Current V = 70V, V (off) = -1.5V 1 mA CEX1 CE BE I V = 70V, V (off) = -1.5V 5 mA CEX2 CE BE @ T = 150°C C I Emitter Cut-off Current V = 5V, I = 0 5 mA EBO EB C h *DC Current Gain V = 4V, I = 4A 20 100 FE CE C V = 4V, I = 10A 5 CE C V (sat) *Collector-Emitter Saturation Voltage I = 4A, I = 0.4A 1.1 V CE C B I = 10A, I = 3.3A 8 V C B V (on) *Base-Emitter On Voltage V = 4V, I = 4A 1.8 V BE CE C f Current Gain Bandwidth Product V = 10V, I = 500mA 2 MHz T CE C * Pulse test: PW≤300μs, duty cycle≤2% Pulse ©2000 Fairchild Semiconductor International Rev. A1, December 2000
