KSE2955T ,PNP Silicon TransistorApplications• DC Current Gain Specified to I = 10 AC• High Current Gain Bandwidth Product : f = 2M ..
KSE3055T ,NPN Silicon TransistorApplications• DC Current Gain Specified to I =10AC • High Current Gain-Bandwidth Product : f = 2MHz ..
KSE3055T ,NPN Silicon TransistorKSE3055TKSE3055TGeneral Purpose and Switching
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KSE3055TTU ,NPN Silicon TransistorKSE3055TKSE3055TGeneral Purpose and Switching
KSE340 ,NPN Epitaxial Silicon TransistorKSE340KSE340High Voltage General Purpose
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KSE2955T
PNP Silicon Transistor
KSE2955T KSE2955T General Purpose and Switching Applications • DC Current Gain Specified to I = 10 A C • High Current Gain Bandwidth Product : f = 2MHz (Min.) T TO-220 1 1.Base 2.Collector 3.Emitter PNP Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage - 70 V CBO V Collector-Emitter Voltage - 60 V CEO V Emitter-Base Voltage - 5 V EBO I Collector Current - 10 A C I Base Current - 6 A B P Collector Dissipation (T =25°C) 75 W C C Collector Dissipation (T =25°C) 0.6 W a T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units BV Collector- Emitter Breakdown Voltage I = - 200mA, I = 0 -60 V CEO C B I Collector Cut-off Current V = - 30V, I = 0 -700 μA CEO CE B I Collector Cut-off Current V = - 70V, V (off) = 1.5V -1 mA CEX1 CE BE I Collector Cut-off Current V = - 70V, V (off) = 1.5V -5 mA CEX2 CE BE @ T = 150°C C I Emitter Cut-off Current V = - 5V, I = 0 -5 mA EBO EB C h * DC Current Gain V = - 4V, I = - 4A 20 100 FE CE C V = - 4V, I = - 10A 5 CE C V (sat) * Collector-Emitter Saturation Voltage I = - 4A, I = - 0.4A -1.1 V CE C B I = - 10A, I = - 3.3A -8 V C B V (on) * Base-Emitter On Voltage V = - 4V, I = - 4A -1.8 V BE CE C f Current Gain Bandwidth Product V = - 10V, I = - 500mA 2 MHz T CE C * Pulse test: PW≤300μs, duty cycle≤2% Pulse ©2000 Fairchild Semiconductor International Rev. A1, December 2000
