KSE180 ,NPN Epitaxial Silicon TransistorApplicationsTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Transistor Absolute Max ..
KSE182 ,NPN Epitaxial Silicon TransistorApplicationsTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Transistor Absolute Max ..
KSE2955T ,PNP Silicon TransistorApplications• DC Current Gain Specified to I = 10 AC• High Current Gain Bandwidth Product : f = 2M ..
KSE3055T ,NPN Silicon TransistorApplications• DC Current Gain Specified to I =10AC • High Current Gain-Bandwidth Product : f = 2MHz ..
KSE3055T ,NPN Silicon TransistorKSE3055TKSE3055TGeneral Purpose and Switching
KSE3055TTU ,NPN Silicon TransistorApplications• DC Current Gain Specified to I =10AC • High Current Gain-Bandwidth Product : f = 2MHz ..
L9813 ,SUPER SMART MIRROR WITH EMBEDDED MCUFEATURES■ 8-18V Supply Operating Range■ 16 MHz Maximum Oscillator Frequency■ 8 MHz Maximum Internal ..
L9820 ,HIGH SIDE DRIVERBLOCK DIAGRAM40mΩ1/6February 1994This is advanced information on a new product now in development o ..
L9820 ,HIGH SIDE DRIVERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Max Forward Voltage 50 VdcSI Reverse Bias Curr ..
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KSE180
NPN Epitaxial Silicon Transistor
KSE180/181/182 KSE180/181/182 Low Power Audio Amplifier Low Current High Speed Switching Applications TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage : KSE180 60 V CBO : KSE181 80 V : KSE182 100 V V Collector-Emitter Voltage : KSE180 40 V CEO : KSE181 60 V : KSE182 80 V V Emitter-Base Voltage 7 V EBO I Collector Current (DC) 3 A C I Collector Current (Pulse) 6 A CP I Base Current 1 A B P Collector Dissipation (T =25°C) 1.5 W C a Collector Dissipation (T =25°C) 12.5 W C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units BV Collector -Emitter Breakdown Voltage CEO : KSE180 I = 10mA, I = 0 40 V C B : KSE181 60 V : KSE182 80 V I Collector Cut-off Current : KSE180 V = 60V, I = 0 0.1 μA CBO CB B : KSE181 V = 80V, I = 0 0.1 μA CB E : KSE182 V = 100V, I = 0 0.1 μA CB E : KSE180 V = 60V, I = 0 @ T = 150°C 0.1 mA CB E C : KSE181 V = 80V, I = 0 @ T = 150°C 0.1 mA CB E C : KSE182 V = 100V, I = 0 @ T = 150°C 0.1 mA CB E C I Emitter Cut-off Current V = 7V, I = 0 0.1 μA EBO BE C h DC Current Gain V = 1V, I = 100mA 50 250 FE CE C V = 1V, I = 500mA 30 CE C V = 1V, I = 1.5A 12 CE C V (sat) Collector-Emitter Saturation Voltage I = 500mA, I = 50mA 0.3 V CE C B I = 1.5A, I = 150mA 0.9 V C B I = 3A, I = 600mA 1.7 V C B V (sat) Base-Emitter Saturation Voltage I = 1.5A, I = 150mA 1.5 V BE C B I = 3A, I = 600mA 2.0 V C B V (on) Base-Emitter On Voltage V = 1V, I = 500mA 1.2 V BE CE C f Current Gain Bandwidth Product V = 10V, I = 100mA 50 MHz T CE C C Output Capacitance V = 10V, I = 0, f = 0.1MHz 30 pF ob CB E ©2001 Rev. A1, January 2001
