KSE13009FTU ,NPN Silicon TransistorKSE13008/13009KSE13008/13009High Voltage Switch Mode Application• High Speed Switching• Suitable fo ..
KSE13009L ,NPN Silicon TransistorApplications High Speed Switching Suitable for Switching Regulator and Motor ControlTO-3P11.Base ..
KSE180 ,NPN Epitaxial Silicon TransistorApplicationsTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Transistor Absolute Max ..
KSE182 ,NPN Epitaxial Silicon TransistorApplicationsTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Transistor Absolute Max ..
KSE2955T ,PNP Silicon TransistorApplications• DC Current Gain Specified to I = 10 AC• High Current Gain Bandwidth Product : f = 2M ..
KSE3055T ,NPN Silicon TransistorApplications• DC Current Gain Specified to I =10AC • High Current Gain-Bandwidth Product : f = 2MHz ..
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L9820 ,HIGH SIDE DRIVERBLOCK DIAGRAM40mΩ1/6February 1994This is advanced information on a new product now in development o ..
L9820 ,HIGH SIDE DRIVERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Max Forward Voltage 50 VdcSI Reverse Bias Curr ..
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KSE13009FTU
NPN Silicon Transistor
KSE13008/13009 KSE13008/13009 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transisor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage CBO : KSE13008 600 V : KSE13009 700 V V Collector-Emitter Voltage CEO : KSE13008 300 V : KSE13009 400 V V Emitter-Base Voltage 9 V EBO I Collector Current (DC) 12 A C I Collector Current (Pulse) 24 A CP I Base Current 6 A B P Collector Dissipation (T =25°C) 100 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) Collector-Emitter Sustaining Voltage CEO : KSE13008 I = 10mA, I = 0 300 V C B : KSE13009 400 V I Emitter Cut-off Current V = 9V, I = 0 1 mA EBO EB C h * DC Current Gain V = 5V, I = 5A 8 40 FE CE C V = 5V, I = 8A 6 30 CE C V (sat) * Collector-Emitter Saturation Voltage I = 5A, I = 1A 1 V CE C B I = 8A, I = 1.6A 1.5 V C B I = 12A, I = 3A 3 V C B V (sat) * Base-Emitter Saturation Voltage I = 5A, I = 1A 1.2 V BE C B I = 8A, I = 1.6A 1.6 V C B C Output Capacitance V = 10V, f = 0.1MHz 180 pF ob CB f Current Gain Bandwidth Product V = 10V, I = 0.5A 4 MHz T CE C t Turn On Time V = 125V, I = 8A 1.1 μs ON CC C I = - I = 1.6A t Storage Time B1 B2 3 μs STG R = 15,6Ω L t Fall Time 0.7 μs F * Pulse test: PW≤300μs, Duty cycle≤2% ©2001 Rev. A1, January 2001
