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KSE13005H2AFSCN/a286avaiNPN Silicon Transistor


KSE13005H2A ,NPN Silicon TransistorKSE13004/13005KSE13004/13005High Voltage Switch Mode Application• High Speed Switching• Suitable fo ..
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KSE13005H2A
NPN Silicon Transistor
KSE13004/13005 KSE13004/13005 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage : KSE13004 600 V CBO : KSE13005 700 V V Collector-Emitter Voltage : KSE13004 300 V CEO : KSE13005 400 V V Emitter-Base Voltage 9 V EBO I Collector Current (DC) 4 A C I Collector Current (Pulse) 8 A CP I Base Current 2 A B P Collector Dissipation (T =25°C) 75 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV (sus) Collector-Emitter Sustaining Voltage CEO : KSE13004 I = 10mA, I = 0 300 V C B : KSE13005 400 V I Emitter Cut-off Current V = 9V, I = 0 1 mA EBO EB C h *DC Current Gain V = 5V, I = 1A 10 60 FE CE C V = 5V, I = 2A 8 40 CE C V (sat) *Collector-Emitter Saturation Voltage I = 1A, I = 0.2A 0.5 V CE C B I = 2A, I = 0.5A 0.6 V C B I = 4A, I = 1A 1 V C B V (sat) *Base-Emitter Saturation Voltage I = 1A, I = 0.2A 1.2 V BE C B I = 2A, I = 0.5A 1.6 V C B C Output Capacitance V = 10V, f = 0.1MHz 65 pF ob CB f Current Gain Bandwidth Product V = 10V, I = 0.5A 4 MHz T CE C t Turn On Time V = 125V, I = 2A 0.8 μs ON CC C I = - I = 0.4A t Storage Time B1 B2 4 μs STG R = 62.5Ω L t Fall Time 0.9 μs F * Pulse test: PW≤300μs, Duty cycle≤2% Pulse ©2001 Rev. A1, January 2001
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