KSE13005FH1TU ,NPN Silicon TransistorKSE13005FKSE13005FHigh Voltage Switch Mode Application• High Speed Switching• Suitable for Switchin ..
KSE13005FH2TU ,NPN Silicon TransistorKSE13005FKSE13005FHigh Voltage Switch Mode Application• High Speed Switching• Suitable for Switchin ..
KSE13005FH2TU ,NPN Silicon TransistorKSE13005FKSE13005FHigh Voltage Switch Mode Application• High Speed Switching• Suitable for Switchin ..
KSE13005H2A ,NPN Silicon TransistorKSE13004/13005KSE13004/13005High Voltage Switch Mode Application• High Speed Switching• Suitable fo ..
KSE13007 ,NPN Silicon TransistorKSE13006/13007KSE13006/13007High Voltage Switch Mode Application• High Speed Switching• Suitable fo ..
KSE13009F ,NPN Silicon TransistorKSE13008/13009KSE13008/13009High Voltage Switch Mode Application• High Speed Switching• Suitable fo ..
L9758 ,Multiple supply for engine control
L9777 ,Low power voltage regulatorapplications where a regulated voltage is to 1 V.required. Double reset function Table 1. ..
L9777A ,Low power voltage regulatorpin configuration (option C) . .7Figure 6. VCC versus output current IVCC . . . . 11Figur ..
L9777A13TR ,Low power voltage regulatorFeaturesThe L9777 is a monolithic integrated low drop Operating DC supply voltage range 5.6 V to ..
L9777B ,Low power voltage regulatorFunctional description . . . . . . 113.1 Voltage regulator . . . 113.2 Reset . . ..
L9777B13TR ,Low power voltage regulatorL9777Low power voltage regulator Datasheet - production data Adjustable reset threshold External ..
KSE13005FH1TU-KSE13005FH2TU
NPN Silicon Transistor
KSE13005F KSE13005F High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 700 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 9 V EBO I Collector Current (DC) 4 A C I Collector Current (Pulse) 8 A CP I Base Current 2 A B P Collector Dissipation (T =25°C) 30 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = 10mA, I = 0 400 V CEO C B I Emitter Cut-off Current V = 9V, I = 0 1 mA EBO EB C h 10 60 *DC Current Gain V = 5V, I = 1A FE CE C V = 5V, I = 2A 8 40 CE C V (sat) *Collector-Emitter Saturation Voltage I = 1A, I = 0.2A 0.5 V CE C B I = 2A, I = 0.5A 0.6 V C B I = 4A, I = 1A 1 V C B 1.2 V V (sat) *Base-Emitter Saturation Voltage I = 1A, I = 0.2A BE C B I = 2A, I = 0.5A 1.6 V C B C Output Capacitance V = 10V , f = 0.1MHz 65 pF ob CB f Current Gain Bandwidth Product V = 10V, I = 0.5A 4 MHz T CE C t Turn On Time V =125V, I = 2A 0.8 μs ON CC C I = - I = 0.4A t Storage Time B1 B2 4 μs STG R = 125Ω L t Fall Time 0.9 μs F * Pulse test: PW≤300μs, Duty Cycle≤2% ©2001 Rev. A1, January 2001
