KSE13003H2ASTU ,NPN Silicon TransistorApplications High Speed Switching Suitable for Switching Regulator and Motor ControlTO-12611. Emi ..
KSE13003H2ASTU ,NPN Silicon TransistorApplications High Speed Switching Suitable for Switching Regulator and Motor ControlTO-12611. Emi ..
KSE13003TH1ATU ,NPN Silicon TransistorApplications High Speed Switching Suitable for Switching Regulator and Motor ControlTO-22011.Base ..
KSE13005 ,NPN Silicon TransistorKSE13004/13005KSE13004/13005High Voltage Switch Mode Application• High Speed Switching• Suitable fo ..
KSE13005F ,NPN Silicon TransistorKSE13005FKSE13005FHigh Voltage Switch Mode Application• High Speed Switching• Suitable for Switchin ..
KSE13005FH1TU ,NPN Silicon TransistorKSE13005FKSE13005FHigh Voltage Switch Mode Application• High Speed Switching• Suitable for Switchin ..
L9733 ,Octal configurable low/high side driverFeatures■ Eight independently self configuring low/high drivers■ Supply voltage from 4.5 V to 5.5 V ..
L9733CN ,Octal configurable low/high side driverAbsolute maximum ratings . . . . . 92.3 Thermal data . . . . . . 103 Electrical performan ..
L9733CNTR ,Octal configurable low/high side driverL9733Octal self configuring low/high side driver
L9733XP ,Octal configurable low/high side driverFeatures■ Eight independently self configuring low/high drivers■ Supply voltage from 4.5 V to 5.5 V ..
L9733XPTR ,Octal configurable low/high side driverFunctional description . . . . . . 184.1 Configurations for outputs 1-8 . 184.1.1 Low-sid ..
L9733XPTR ,Octal configurable low/high side driverFunctional description . . . . . . 184.1 Configurations for outputs 1-8 . 184.1.1 Low-sid ..
KSE13003H1ASTU-KSE13003H2ASTU
NPN Silicon Transistor
KSE13003 KSE13003 High Voltage Switch Mode Applications High Speed Switching Suitable for Switching Regulator and Motor Control TO-126 1 1. Emitter 2.Collector 3.Base NPN Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 700 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 9 V EBO I Collector Current (DC) 1.5 A C I Collector Current (Pulse) 3 A CP I Base Current 0.75 A B P Collector Dissipation (T =25°C) 20 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I = 5mA, I = 0 400 V CEO C B I Emitter Cut-off Current V = 9V, I = 0 10 μA EBO EB C h *DC Current Gain V = 2V, I = 0.5A 8 40 FE CE C V = 2V, I =1A 5 CE C V (sat) *Collector Emitter Saturation Voltage I = 0.5A, I = 0.1A 0.5 V CE C B I = 1A, I = 0.25A 1 V C B I = 1.5A, I = 0.5A 3 V C B V (sat) *Base Emitter Saturation Voltage I = 0.5A, I = 0.1A 1 V BE C B I = 1A, I = 0.25A 1.2 V C B C Output Capacitance V = 10V , f = 0.1MHz 21 pF ob CB f Current Gain Bandwidth Product V = 10V, I = 0.1A 4 MHz T CE C t Turn On Time V =125V, I = 1A 1.1 μs ON CC C I = 0.2A, I = - 0.2A t Storage Time B1 B2 4.0 μs STG R = 125Ω L t Fall Time 0.7 μs F * Pulse Test: Pulse Width=5ms, Duty Cycle≤10% ©2002 Rev. B1, December 2002
