KSE13003 ,NPN Silicon TransistorApplications• High Speed Switching• Suitable for Switching Regulator and Motor ControlTO-12611. Emi ..
KSE13003H1ASTU ,NPN Silicon TransistorKSE13003KSE13003High Voltage Switch Mode
KSE13003H2ASTU ,NPN Silicon TransistorApplications High Speed Switching Suitable for Switching Regulator and Motor ControlTO-12611. Emi ..
KSE13003H2ASTU ,NPN Silicon TransistorApplications High Speed Switching Suitable for Switching Regulator and Motor ControlTO-12611. Emi ..
KSE13003TH1ATU ,NPN Silicon TransistorApplications High Speed Switching Suitable for Switching Regulator and Motor ControlTO-22011.Base ..
KSE13005 ,NPN Silicon TransistorKSE13004/13005KSE13004/13005High Voltage Switch Mode Application• High Speed Switching• Suitable fo ..
L9733 ,Octal configurable low/high side driverfeatures 246.1 Charge pump usage . 246.2 Waveshaping . . . . . . 246.3 POR register ..
L9733 ,Octal configurable low/high side driverFeatures■ Eight independently self configuring low/high drivers■ Supply voltage from 4.5 V to 5.5 V ..
L9733CN ,Octal configurable low/high side driverAbsolute maximum ratings . . . . . 92.3 Thermal data . . . . . . 103 Electrical performan ..
L9733CNTR ,Octal configurable low/high side driverL9733Octal self configuring low/high side driver
L9733XP ,Octal configurable low/high side driverFeatures■ Eight independently self configuring low/high drivers■ Supply voltage from 4.5 V to 5.5 V ..
L9733XPTR ,Octal configurable low/high side driverFunctional description . . . . . . 184.1 Configurations for outputs 1-8 . 184.1.1 Low-sid ..
KSE13003
NPN Silicon Transistor
KSE13003 KSE13003 High Voltage Switch Mode Applications • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-126 1 1. Emitter 2.Collector 3.Base NPN Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 700 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 9 V EBO I Collector Current (DC) 1.5 A C I Collector Current (Pulse) 3 A CP I Base Current 0.75 A B P Collector Dissipation (T =25°C) 20 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I = 5mA, I = 0 400 V CEO C B I Emitter Cut-off Current V = 9V, I = 0 10 μA EBO EB C h *DC Current Gain V = 2V, I = 0.5A 8 40 FE CE C V = 2V, I =1A 5 CE C V (sat) *Collector Emitter Saturation Voltage I = 0.5A, I = 0.1A 0.5 V CE C B I = 1A, I = 0.25A 1 V C B I = 1.5A, I = 0.5A 3 V C B V (sat) *Base Emitter Saturation Voltage I = 0.5A, I = 0.1A 1 V BE C B I = 1A, I = 0.25A 1.2 V C B C Output Capacitance V = 10V , f = 0.1MHz 21 pF ob CB f Current Gain Bandwidth Product V = 10V, I = 0.1A 4 MHz T CE C t Turn On Time V =125V, I = 1A 1.1 μs ON CC C I = 0.2A, I = - 0.2A t Storage Time B1 B2 4.0 μs STG R = 125Ω L t Fall Time 0.7 μs F * Pulse Test: Pulse Width=5ms, Duty Cycle≤10% ©2001 Rev. A1, September 2001
