KSD986YS ,NPN Epitaxial Silicon Darlington TransistorKSD985/986KSD985/986Low Frequency Power Amplifier Low Speed Switching Industrial UseTO-12611. Emit ..
KSE13003 ,NPN Silicon TransistorApplications• High Speed Switching• Suitable for Switching Regulator and Motor ControlTO-12611. Emi ..
KSE13003H1ASTU ,NPN Silicon TransistorKSE13003KSE13003High Voltage Switch Mode
KSE13003H2ASTU ,NPN Silicon TransistorApplications High Speed Switching Suitable for Switching Regulator and Motor ControlTO-12611. Emi ..
KSE13003H2ASTU ,NPN Silicon TransistorApplications High Speed Switching Suitable for Switching Regulator and Motor ControlTO-12611. Emi ..
KSE13003TH1ATU ,NPN Silicon TransistorApplications High Speed Switching Suitable for Switching Regulator and Motor ControlTO-22011.Base ..
L9733 ,Octal configurable low/high side driverfeatures 246.1 Charge pump usage . 246.2 Waveshaping . . . . . . 246.3 POR register ..
L9733 ,Octal configurable low/high side driverFeatures■ Eight independently self configuring low/high drivers■ Supply voltage from 4.5 V to 5.5 V ..
L9733CN ,Octal configurable low/high side driverAbsolute maximum ratings . . . . . 92.3 Thermal data . . . . . . 103 Electrical performan ..
L9733CNTR ,Octal configurable low/high side driverL9733Octal self configuring low/high side driver
L9733XP ,Octal configurable low/high side driverFeatures■ Eight independently self configuring low/high drivers■ Supply voltage from 4.5 V to 5.5 V ..
L9733XPTR ,Octal configurable low/high side driverFunctional description . . . . . . 184.1 Configurations for outputs 1-8 . 184.1.1 Low-sid ..
KSD986OS-KSD986YS
NPN Epitaxial Silicon Darlington Transistor
KSD985/986 KSD985/986 Low Frequency Power Amplifier Low Speed Switching Industrial Use TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 150 V CBO V Collector-Emitter Volage CEO : KSD985 60 V : KSD986 80 V V Emitter-Base Voltage 8.0 V EBO I Collector Current (DC) 1.5 A C I *Collector Current (Pulse) 3.0 A CP I Base Current 0.15 A B P Collector Dissipation (T =25°C) 1.0 W C a P Collector Dissipation (T =25°C) 10 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG * PW≤300μs, Duty Cycle10% Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = 60V, I = 0 10 μA CBO CB E I Collector Cut-off Current V = 60V, R = 51Ω 1.0 mA CER CE BE @ T = 125°C C I Collector Cut-off Current V = 60V, V (off) = -1.5A 10 μA CEX1 CE BE I V = 60V, V (off) = -1.5A 1.0 mA CEX2 CE BE @ T = 125°C C I Emitter Cut-off Current V = 5V, I = 0 1.0 mA EBO EB C h *DC Current Gain V = 2V, I = 0.5A 1000 FE1 CE C h V = 2V, I = 1A 2000 30000 FE2 CE C V (sat) *Collector-Emitter Saturation Voltage I = 1A, I = 1mA 1.5 V CE C B V (sat) *Base-Emitter Saturation Voltage I = 1A, I = 1mA 2.0 V BE C B t Turn ON Time V = 50V, I = 1A 0.5 μs ON CC C I = - I = 1mA t Storage Time B1 B2 1.0 μs STG R = 50Ω L t Fall Time 1.0 μs F * Pulse Test: PW≤350μs, Duty Cycle≤2% h Classification FE Classification R O Y h 2000 ~ 5000 4000 ~ 10000 8000 ~ 30000 FE2 ©2000 Fairchild Semiconductor International Rev. A, February 2000
