KSD882 ,NPN Epitaxial Silicon TransistorKSD882KSD882Audio Frequency Power Amplifier Low Speed Switching Complement to KSB772TO-12611. Emit ..
KSD882-Y , Audio Frequency Power Amplifier
KSD882YS ,NPN Epitaxial Silicon TransistorKSD882KSD882Audio Frequency Power Amplifier Low Speed Switching Complement to KSB772TO-12611. Emit ..
KSD882YS ,NPN Epitaxial Silicon TransistorKSD882KSD882Audio Frequency Power Amplifier Low Speed Switching Complement to KSB772TO-12611. Emit ..
KSD882YSTU ,NPN Epitaxial Silicon TransistorKSD882KSD882Audio Frequency Power Amplifier Low Speed Switching Complement to KSB772TO-12611. Emit ..
KSD986OS ,NPN Epitaxial Silicon Darlington TransistorKSD985/986KSD985/986Low Frequency Power Amplifier Low Speed Switching Industrial UseTO-12611. Emit ..
L9705D ,DOUBLE QUAD CONTACT INTERFACE CIRCUITABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV DC Supply Voltage +26 VSDCV Peak Transient Sup ..
L9733 ,Octal configurable low/high side driverfeatures 246.1 Charge pump usage . 246.2 Waveshaping . . . . . . 246.3 POR register ..
L9733 ,Octal configurable low/high side driverFeatures■ Eight independently self configuring low/high drivers■ Supply voltage from 4.5 V to 5.5 V ..
L9733CN ,Octal configurable low/high side driverAbsolute maximum ratings . . . . . 92.3 Thermal data . . . . . . 103 Electrical performan ..
L9733CNTR ,Octal configurable low/high side driverL9733Octal self configuring low/high side driver
L9733XP ,Octal configurable low/high side driverFeatures■ Eight independently self configuring low/high drivers■ Supply voltage from 4.5 V to 5.5 V ..
KSD882
NPN Epitaxial Silicon Transistor
KSD882 KSD882 Audio Frequency Power Amplifier Low Speed Switching Complement to KSB772 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector- Base Voltage 40 V CBO V Collector-Emitter Voltage 30 V CEO V Emitter- Base Voltage 5 V EBO I Collector Current (DC) 3 A C I *Collector Current (Pulse) 7 A CP I Base Current 0.6 A B P Collector Dissipation (T =25°C) 10 W C C P Collector Dissipation (T =25°C) 1 W C a T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG * PW≤10ms, Duty Cycle≤50% Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = 30V, I = 0 1 μA CBO CB E I Emitter Cut-off Current V = 3V, I = 0 1 μA EBO EB C h *DC Current Gain V = 2V, I = 20mA 30 150 FE1 CE C h V = 2V, I = 1A 60 160 400 FE2 CE C V (sat) *Collector-Emitter Saturation Voltage I = 2A, I = 0.2A 0.3 0.5 V CE C B V (sat) *Base-Emitter Saturation Voltage I = 2A, I = 0.2A 1.0 2.0 V BE C B f Current Gain Bandwidth Product V = 5V, I = 0.1A 90 MHz T CE E C Output Capacitance V = 10V, I = 0 45 pF ob CB E f = 1MHz * Pulse Test: PW≤350μs, Duty Cycle≤2% Pulsed h Classificntion FE Classification R O Y G h 60 ~ 120 100 ~ 200 160 ~ 320 200 ~ 400 FE2 ©2000 Fairchild Semiconductor International Rev. A, February 2000
