KSD880-Y ,NPN Epitaxial Silicon TransistorKSD880KSD880Low Frequency Power Amplifier Complement to KSB834TO-22011.Base 2.Collector 3.Em ..
KSD880-Y ,NPN Epitaxial Silicon TransistorKSD880KSD880Low Frequency Power Amplifier Complement to KSB834TO-22011.Base 2.Collector 3.Em ..
KSD882 ,NPN Epitaxial Silicon TransistorKSD882KSD882Audio Frequency Power Amplifier Low Speed Switching Complement to KSB772TO-12611. Emit ..
KSD882-Y , Audio Frequency Power Amplifier
KSD882YS ,NPN Epitaxial Silicon TransistorKSD882KSD882Audio Frequency Power Amplifier Low Speed Switching Complement to KSB772TO-12611. Emit ..
KSD882YS ,NPN Epitaxial Silicon TransistorKSD882KSD882Audio Frequency Power Amplifier Low Speed Switching Complement to KSB772TO-12611. Emit ..
L9705 ,DOUBLE QUAD CONTACT INTERFACE CIRCUITL9705DOUBLE QUAD CONTACT INTERFACE CIRCUITADVANCE DATAOPERATING DC SUPPLY VOLTAGE RANGE5V TO 25VSUP ..
L9705D ,DOUBLE QUAD CONTACT INTERFACE CIRCUITABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV DC Supply Voltage +26 VSDCV Peak Transient Sup ..
L9733 ,Octal configurable low/high side driverfeatures 246.1 Charge pump usage . 246.2 Waveshaping . . . . . . 246.3 POR register ..
L9733 ,Octal configurable low/high side driverFeatures■ Eight independently self configuring low/high drivers■ Supply voltage from 4.5 V to 5.5 V ..
L9733CN ,Octal configurable low/high side driverAbsolute maximum ratings . . . . . 92.3 Thermal data . . . . . . 103 Electrical performan ..
L9733CNTR ,Octal configurable low/high side driverL9733Octal self configuring low/high side driver
KSD880-Y
NPN Epitaxial Silicon Transistor
KSD880 KSD880 Low Frequency Power Amplifier Complement to KSB834 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current 3 A C I Base Current 0.3 A B P Collector Dissipation (T =25°C) 30 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = 60V, I = 0 100 μA CBO CB E I Emitter Cut-off Current V = 7V, I = 0 100 μA EBO EB C BV Collector-Emitter Breakdown Voltage I = 50mA, I = 0 60 V CEO C B h DC Current Gain V = 5V, I = 0.5A 60 300 FE1 CE C h V = 5V, I = 3A 20 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = 3A, I = 0.3A 0.4 1 V CE C B V (on) Base-Emitter On Voltage V = 5V, I = 0.5A 0.7 1 V BE CE C f Current Gain Bandwidth Product V = 5V, I = 0.5A 3 MHz T CE C C Output Capacitance V = 10V, I = 0, f = 1MHz 70 pF ob CB E t Turn ON Time V = 30V, I = 1A 0.8 μs ON CC C I = - I = 0.2A t Storage Time B1 B2 1.5 μs STG R = 30Ω L t Fall Time 0.8 μs F h Classification FE Classification O Y G h 60 ~ 120 100 ~ 200 150 ~ 300 FE1 ©2000 Fairchild Semiconductor International Rev. A, February 2000
