KSD526-OTU ,NPN Epitaxial Silicon TransistorKSD526KSD526Power Amplifier
KSD526-Y ,NPN Epitaxial Silicon TransistorApplications Complement to KSB596TO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon Tr ..
KSD526YTU ,NPN Epitaxial Silicon TransistorApplications Complement to KSB596TO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon Tr ..
KSD560Y ,NPN Epitaxial Silicon Darlington TransistorKSD560KSD560Low Frequency Power Amplifier Low Speed Switching Industrial Use Complement to KSB601 ..
KSD73YTSTU ,NPN Epitaxial Silicon TransistorKSD73KSD73Low Frequency High Power Amplifier Collector-Base Voltage : V = 100VCBO Collector Curr ..
KSD73YTU ,NPN Epitaxial Silicon TransistorKSD73KSD73Low Frequency High Power Amplifier Collector-Base Voltage : V = 100VCBO Collector Curr ..
L9686 ,AUTOMOTIVE DIRECTION INDICATORELECTRICAL CHARACTERISTICS (– 20°C < Tamb <, 100°C, 8V < VS < 18V unless otherwise speci-fied.)Symb ..
L9700 ,HEX PRECISION LIMITERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Supply Voltage 20 VCCI Input Current per Chann ..
L9700D ,HEX PRECISION LIMITERL9700®HEX PRECISION LIMITERHIGH PERFORMANCE CLAMPING AT.GROUND AND POSITIVE REFERENCEVOLTAGE. FAST ..
L9700D013TR ,HEX PRECISION LIMITERL9700®HEX PRECISION LIMITERHIGH PERFORMANCE CLAMPING AT.GROUND AND POSITIVE REFERENCEVOLTAGE. FAST ..
L9700D-E ,Hex precision limiterFeatures■ High performance clamping at ground and positive reference voltage ■ Fast active clamping ..
L9703 ,OCTAL GROUND CONTACT MONITORING CIRCUITL9703OCTAL GROUND CONTACT MONITORING CIRCUIT. OPERATING DC SUPPLY VOLTAGE RANGE5V TO 25V. SUPPLY OV ..
KSD526-OTU-KSD526-Y-KSD526YTU
NPN Epitaxial Silicon Transistor
KSD526 KSD526 Power Amplifier Applications Complement to KSB596 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 80 V CBO V Collector-Emitter Voltage 80 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 4 A C I Base Current 0.4 A B P Collector Dissipation ( T =25°C) 30 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = 80V, I = 0 30 μA CBO CB E I Emitter Cut-off Current V = 5V, I = 0 100 μA EBO EB C BV Collector-Emitter Breakdown Voltage I = 50mA, I = 0 80 V CEO C B BV Emitter-Base Breakdown Voltage I = 10mA, I = 0 5 V EBO E C h DC Current Gain V = 50V, I = 0.5A 40 240 FE1 CE C h V = 5V, I = 3A 15 50 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = 3A, I = 0.3A 0.45 1.5 V CE C B V (on) Base-Emitter ON Voltage V = 5V, I = 3A 1 1.5 V BE CE C f Current Gain Bandwidth Product V = 5V, I = 0.5A 3 8 MHz T CE C C Collector Output Capacitance V = 10V, I = 0, f = 1MHz 90 pF ob CB E h Classification FE Classification R O Y h 40 ~ 80 70 ~ 140 120 ~ 240 FE ©2000 Fairchild Semiconductor International Rev. A, February 2000
