KSD471AYTA ,NPN Epitaxial Silicon TransistorKSD471AKSD471AAudio Frequency Power Amplifier• Complement to KSB564A• Collector Current : I =1AC• C ..
KSD526-OTU ,NPN Epitaxial Silicon TransistorKSD526KSD526Power Amplifier
KSD526-Y ,NPN Epitaxial Silicon TransistorApplications Complement to KSB596TO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon Tr ..
KSD526YTU ,NPN Epitaxial Silicon TransistorApplications Complement to KSB596TO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon Tr ..
KSD560Y ,NPN Epitaxial Silicon Darlington TransistorKSD560KSD560Low Frequency Power Amplifier Low Speed Switching Industrial Use Complement to KSB601 ..
KSD73YTSTU ,NPN Epitaxial Silicon TransistorKSD73KSD73Low Frequency High Power Amplifier Collector-Base Voltage : V = 100VCBO Collector Curr ..
L9669 ,FAULT TOLERANT CAN TRANSCEIVERBlock DiagramKL30(+12V)+5VVoltageRegulatorVS INH VCC5Vint 14 1 1075k7 Wake-upWAKEControlCANHVCCDriv ..
L9686 ,AUTOMOTIVE DIRECTION INDICATORELECTRICAL CHARACTERISTICS (– 20°C < Tamb <, 100°C, 8V < VS < 18V unless otherwise speci-fied.)Symb ..
L9700 ,HEX PRECISION LIMITERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Supply Voltage 20 VCCI Input Current per Chann ..
L9700D ,HEX PRECISION LIMITERL9700®HEX PRECISION LIMITERHIGH PERFORMANCE CLAMPING AT.GROUND AND POSITIVE REFERENCEVOLTAGE. FAST ..
L9700D013TR ,HEX PRECISION LIMITERL9700®HEX PRECISION LIMITERHIGH PERFORMANCE CLAMPING AT.GROUND AND POSITIVE REFERENCEVOLTAGE. FAST ..
L9700D-E ,Hex precision limiterFeatures■ High performance clamping at ground and positive reference voltage ■ Fast active clamping ..
KSD471ACGTA-KSD471ACYTA-KSD471AYTA
NPN Epitaxial Silicon Transistor
KSD471A KSD471A Audio Frequency Power Amplifier • Complement to KSB564A • Collector Current : I =1A C • Collector Power Dissipation : P =800mW C • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 30 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 1 A C P Collector Power Dissipation 800 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 40 V CBO C E BV Collector-Emitter Breakdown Voltage I =10mA, I =0 30 V CEO C B BV Emitter-Base Breakdown Voltage I =100μA, I =0 5 V EBO E C I Collector Cut-off Current V =30V, I =0 0.1 μA CBO CB E h DC Current Gain V =1V, I =100mA 120 400 FE CE C V (sat) Collector-Emitter Saturation Voltage I =1A, I =0.1A 0.5 V CE C B V (sat) Base-Emitter Saturation Voltage I =1A, I =0.1A 1.2 V BE C B f Current Gain BandWidth Product V =6V, I =10mA 130 MHz T CE C C Output Capacitance V =6V, I =0, f=1MHz 16 pF ob CB E h Classification FE Classification Y G h 120 ~ 240 200 ~ 400 FE ©2004 Rev. B3, April 2004
