KSD471A ,NPN Epitaxial Silicon TransistorKSD471AKSD471AAudio Frequency Power Amplifier• Complement to KSB564A• Collector Current : I =1AC• C ..
KSD471ACGTA ,NPN Epitaxial Silicon TransistorKSD471AKSD471AAudio Frequency Power Amplifier• Complement to KSB564A• Collector Current : I =1AC• C ..
KSD471ACYTA ,NPN Epitaxial Silicon TransistorKSD471AKSD471AAudio Frequency Power Amplifier• Complement to KSB564A• Collector Current : I =1AC• C ..
KSD471A-Y , NPN Silicon Transistors
KSD471A-Y , NPN Silicon Transistors
KSD471AYTA ,NPN Epitaxial Silicon TransistorKSD471AKSD471AAudio Frequency Power Amplifier• Complement to KSB564A• Collector Current : I =1AC• C ..
L9651-TR ,SMART QUAD SWITCHL9651SMART QUAD SWITCH■ Modified VDMOS Power Stage (U > 80V)DSBR■RDSON < 500 mOhm (T = 25°C) j■CMOS ..
L9653M , IF Filter for Audio Applications 33,90 MHz and 38,90 MHz
L9654 ,Quad squib driver and dual sensor interface for safety applicationFunctional description . . . . . . 184.1 Overview . 184.2 Power on reset (POR) . . ..
L9658 ,Quad squib driver and dual sensor interface ASIC for safety applicationFunctional description . . . . . . 184.1 Overview . 184.2 Power on reset (POR) . . ..
L9659 ,Octal squib driver ASIC for safety applicationFeatures that are accessed/controlled for the SPI . . . . . . . 21Table 10. SPI MOSI/MISO respon ..
L9660 ,Quad squib driver ASIC for safety applicationFeatures that are accessed/controlled for the SPI . . . . . . . 20Table 10. SPI MOSI/MISO respon ..
KSD471A
NPN Epitaxial Silicon Transistor
KSD471A KSD471A Audio Frequency Power Amplifier • Complement to KSB564A • Collector Current : I =1A C • Collector Power Dissipation : P =800mW C • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 30 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 1 A C P Collector Power Dissipation 800 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 40 V CBO C E BV Collector-Emitter Breakdown Voltage I =10mA, I =0 30 V CEO C B BV Emitter-Base Breakdown Voltage I =100μA, I =0 5 V EBO E C I Collector Cut-off Current V =30V, I =0 0.1 μA CBO CB E h DC Current Gain V =1V, I =100mA 70 400 FE CE C V (sat) Collector-Emitter Saturation Voltage I =1A, I =0.1A 0.5 V CE C B V (sat) Base-Emitter Saturation Voltage I =1A, I =0.1A 1.2 V BE C B f Current Gain BandWidth Product V =6V, I =10mA 130 MHz T CE C C Output Capacitance V =6V, I =0, f=1MHz 16 pF ob CB E h Classification FE Classification O Y G h 70 ~ 140 120 ~ 240 200 ~ 400 FE ©2002 Rev. A2, January 2002
