KSD363YTU ,NPN Epitaxial Silicon TransistorKSD363KSD363B/W TV Horizontal Deflection Output Collector-Base Voltage : V =300VCBO Collector Cur ..
KSD401 ,NPN Epitaxial Silicon TransistorKSD401KSD401TV Vertical Deflection Output Collector-Base Voltage : V =200VCBO Collector Current : ..
KSD471A ,NPN Epitaxial Silicon TransistorKSD471AKSD471AAudio Frequency Power Amplifier• Complement to KSB564A• Collector Current : I =1AC• C ..
KSD471ACGTA ,NPN Epitaxial Silicon TransistorKSD471AKSD471AAudio Frequency Power Amplifier• Complement to KSB564A• Collector Current : I =1AC• C ..
KSD471ACYTA ,NPN Epitaxial Silicon TransistorKSD471AKSD471AAudio Frequency Power Amplifier• Complement to KSB564A• Collector Current : I =1AC• C ..
KSD471A-Y , NPN Silicon Transistors
L9638D ,LIN BUS TRANSCEIVERElectrical Characteristics (V = 6V to 26V; T = -40 to 150 °C unless otherwise specified)S J Item Sy ..
L9638D013TR ,LIN BUS TRANSCEIVERElectrical Characteristics (continued)(V = 6V to 26V; T = -40 to 150 °C unless otherwise specified ..
L9638D013TR ,LIN BUS TRANSCEIVERBlock DiagramVS VS VSVS VS_ _D DIn In Int t te e ern rn rna a alllIn In Int. t. t.5 5 5V V VVo Vo V ..
L9651 ,SMART QUAD SWITCHL9651SMART QUAD SWITCH■ Modified VDMOS Power Stage (U > 80V)DSBR■RDSON < 500 mOhm (T = 25°C) j■CMOS ..
L9651-TR ,SMART QUAD SWITCHL9651SMART QUAD SWITCH■ Modified VDMOS Power Stage (U > 80V)DSBR■RDSON < 500 mOhm (T = 25°C) j■CMOS ..
L9653M , IF Filter for Audio Applications 33,90 MHz and 38,90 MHz
KSD363-R-KSD363YTU
NPN Epitaxial Silicon Transistor
KSD363 KSD363 B/W TV Horizontal Deflection Output Collector-Base Voltage : V =300V CBO Collector Current : I =6A C Collector Dissipation : P =40W(T =25°C) C C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 300 V CBO V Collector-Emitter Voltage 120 V CEO V Emitter-Base Voltage 8 V EBO I Collector Current 6 A C P Collector Dissipation (T =25°C) 40 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =1mA, I = 0 300 V CBO C E BV Collector-Emitter Breakdown Voltage I = 20mA, I = 0 120 V CEO C B BV Emitter-Base Breakdown Voltage I = 1mA, I = 0 8 V EBO E C I Collector Cut-off Current V = 250V, I = 0 1 mA CBO CB E h DC Current Gain V = 5V, I = 1A 40 240 FE CE C V (sat) Collector-Emitter Saturation Voltage I = 1A, I = 0.1A 1 V CE C B V (sat) Base-Emitter Saturation Voltage I = 1A, I = 0.1A 1.5 V BE C B f Current Gain Bandwidth Product V = 5V, I = 0.5A 10 MHz T CE C h Classification FE Classification R O Y h 40 ~ 80 70 ~ 140 120 ~ 240 FE ©2000 Fairchild Semiconductor International Rev. A, February 2000
