KSD362RTU ,NPN Epitaxial Silicon TransistorKSD362KSD362B/W TV Horizontal Deflection Output Collector-Base Voltage : V =150VCBO Collector Cur ..
KSD363-R ,NPN Epitaxial Silicon TransistorKSD363KSD363B/W TV Horizontal Deflection Output Collector-Base Voltage : V =300VCBO Collector Cur ..
KSD363YTU ,NPN Epitaxial Silicon TransistorKSD363KSD363B/W TV Horizontal Deflection Output Collector-Base Voltage : V =300VCBO Collector Cur ..
KSD401 ,NPN Epitaxial Silicon TransistorKSD401KSD401TV Vertical Deflection Output Collector-Base Voltage : V =200VCBO Collector Current : ..
KSD471A ,NPN Epitaxial Silicon TransistorKSD471AKSD471AAudio Frequency Power Amplifier• Complement to KSB564A• Collector Current : I =1AC• C ..
KSD471ACGTA ,NPN Epitaxial Silicon TransistorKSD471AKSD471AAudio Frequency Power Amplifier• Complement to KSB564A• Collector Current : I =1AC• C ..
L9637D ,ISO INTERFACEelectrical characteristics are valid within the below defined op-erating conditions, unless otherwi ..
L9637D013TR ,ISO INTERFACEelectrical characteristics are valid within the below defined op-erating conditions, unless otherwi ..
L9638D ,LIN BUS TRANSCEIVERElectrical Characteristics (V = 6V to 26V; T = -40 to 150 °C unless otherwise specified)S J Item Sy ..
L9638D013TR ,LIN BUS TRANSCEIVERElectrical Characteristics (continued)(V = 6V to 26V; T = -40 to 150 °C unless otherwise specified ..
L9638D013TR ,LIN BUS TRANSCEIVERBlock DiagramVS VS VSVS VS_ _D DIn In Int t te e ern rn rna a alllIn In Int. t. t.5 5 5V V VVo Vo V ..
L9651 ,SMART QUAD SWITCHL9651SMART QUAD SWITCH■ Modified VDMOS Power Stage (U > 80V)DSBR■RDSON < 500 mOhm (T = 25°C) j■CMOS ..
KSD362-R-KSD362RTU
NPN Epitaxial Silicon Transistor
KSD362 KSD362 B/W TV Horizontal Deflection Output Collector-Base Voltage : V =150V CBO Collector Current : I =5A C Collector Dissipation : P =40W(T =25°C) C C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 150 V CBO V Collector-Emitter Voltage 70 V CEO V Emitter-Base Voltage 8 V EBO I Collector Current 5 A C P Collector Dissipation (T =25°C) 40 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = 1mA, I = 0 150 V CBO C E BV Collector-Emitter Breakdown Voltage I = 2mA, R = ∞ 70 V CEO C BE BV Emitter-Base Breakdown Voltage I = 1mA, I = 0 8 V EBO E C I Collector Cut-off Current V = 100V, I = 0 20 μA CBO CB E h DC Current Gain V = 5V, I = 5A 20 140 FE CE C V (sat) Collector-Emitter Saturation Voltage I = 5A, I = 0.5A 1 V CE C B V (sat) Base-Emitter Saturation Voltage I = 5A, I = 0.5A 1.5 V BE C B f Current Gain Bandwidth Product V = 5V, I = 0.5A 10 MHz T CE C h Classification FE Classification N R O h 20 ~ 50 40 ~ 80 70 ~ 140 FE ©2000 Fairchild Semiconductor International Rev. A, February 2000
