KSD288YTU ,NPN Epitaxial Silicon TransistorKSD288KSD288Power Regulator Low Frequency High Power Amplifier Collector-Base Voltage : V =80VCBO ..
KSD288YTU ,NPN Epitaxial Silicon TransistorKSD288KSD288Power Regulator Low Frequency High Power Amplifier Collector-Base Voltage : V =80VCBO ..
KSD288-YTU ,NPN Epitaxial Silicon TransistorKSD288KSD288Power Regulator Low Frequency High Power Amplifier Collector-Base Voltage : V =80VCBO ..
KSD362-R ,NPN Epitaxial Silicon TransistorKSD362KSD362B/W TV Horizontal Deflection Output Collector-Base Voltage : V =150VCBO Collector Cur ..
KSD362-R ,NPN Epitaxial Silicon TransistorKSD362KSD362B/W TV Horizontal Deflection Output Collector-Base Voltage : V =150VCBO Collector Cur ..
KSD362RTU ,NPN Epitaxial Silicon TransistorKSD362KSD362B/W TV Horizontal Deflection Output Collector-Base Voltage : V =150VCBO Collector Cur ..
L9616-TR ,HIGH SPEED CAN BUS TRANSCEIVERELECTRICAL CHARACTERISTICS (T = -40 to 125°C; V = 4.5 to 5.5V; Dominat: VTXO = GND; Re-OP Scessive: ..
L9637D ,ISO INTERFACEelectrical characteristics are valid within the below defined op-erating conditions, unless otherwi ..
L9637D013TR ,ISO INTERFACEelectrical characteristics are valid within the below defined op-erating conditions, unless otherwi ..
L9638D ,LIN BUS TRANSCEIVERElectrical Characteristics (V = 6V to 26V; T = -40 to 150 °C unless otherwise specified)S J Item Sy ..
L9638D013TR ,LIN BUS TRANSCEIVERElectrical Characteristics (continued)(V = 6V to 26V; T = -40 to 150 °C unless otherwise specified ..
L9638D013TR ,LIN BUS TRANSCEIVERBlock DiagramVS VS VSVS VS_ _D DIn In Int t te e ern rn rna a alllIn In Int. t. t.5 5 5V V VVo Vo V ..
KSD288YTU-KSD288-YTU
NPN Epitaxial Silicon Transistor
KSD288 KSD288 Power Regulator Low Frequency High Power Amplifier Collector-Base Voltage : V =80V CBO Collector Dissipation : P =25W(T =25°C) C C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 80 V CBO V Collector-Emitter Voltage 55 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 3 A C P Collector Dissipation (T =25°C) 25 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =500μA, I =0 80 V CBO C E BV Collector-Emitter Breakdown Voltage I =10mA,I =0 55 V CEO C B BV Emitter-Base Breakdown Voltage I =500μA, I =0 5 V EBO E C I Collector Cut-off Current V =50V,I =0 50 μA CBO CB E h DC Current Gain V =5V,I =0.5A 40 240 FE CE C V (sat) Collector-Emitter Saturation Voltage I =1A, I =0.1A 1 V CE C B h Classification FE Classification R O Y h 40 ~ 80 70 ~ 140 120 ~ 240 FE ©2000 Fairchild Semiconductor International Rev. A, February 2000
