KSD261 ,NPN Epitaxial Silicon TransistorKSD261KSD261Low Frequency Power Amplifier• Complement to KSA643• Collector Power Dissipation : P =5 ..
KSD261 ,NPN Epitaxial Silicon TransistorKSD261KSD261Low Frequency Power Amplifier• Complement to KSA643• Collector Power Dissipation : P =5 ..
KSD288YTU ,NPN Epitaxial Silicon TransistorKSD288KSD288Power Regulator Low Frequency High Power Amplifier Collector-Base Voltage : V =80VCBO ..
KSD288YTU ,NPN Epitaxial Silicon TransistorKSD288KSD288Power Regulator Low Frequency High Power Amplifier Collector-Base Voltage : V =80VCBO ..
KSD288-YTU ,NPN Epitaxial Silicon TransistorKSD288KSD288Power Regulator Low Frequency High Power Amplifier Collector-Base Voltage : V =80VCBO ..
KSD362-R ,NPN Epitaxial Silicon TransistorKSD362KSD362B/W TV Horizontal Deflection Output Collector-Base Voltage : V =150VCBO Collector Cur ..
L9616D ,HIGH SPEED CAN BUS TRANSCEIVERELECTRICAL CHARACTERISTICS (T = -40 to 125°C; V = 4.5 to 5.5V; Dominat: VTXO = GND; Re-OP Scessive: ..
L9616-TR ,HIGH SPEED CAN BUS TRANSCEIVERELECTRICAL CHARACTERISTICS (T = -40 to 125°C; V = 4.5 to 5.5V; Dominat: VTXO = GND; Re-OP Scessive: ..
L9637D ,ISO INTERFACEelectrical characteristics are valid within the below defined op-erating conditions, unless otherwi ..
L9637D013TR ,ISO INTERFACEelectrical characteristics are valid within the below defined op-erating conditions, unless otherwi ..
L9638D ,LIN BUS TRANSCEIVERElectrical Characteristics (V = 6V to 26V; T = -40 to 150 °C unless otherwise specified)S J Item Sy ..
L9638D013TR ,LIN BUS TRANSCEIVERElectrical Characteristics (continued)(V = 6V to 26V; T = -40 to 150 °C unless otherwise specified ..
KSD261
NPN Epitaxial Silicon Transistor
KSD261 KSD261 Low Frequency Power Amplifier • Complement to KSA643 • Collector Power Dissipation : P =500mW C • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 20 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 500 mA C P Collector Power Dissipation 500 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 40 V CBO C E BV Collector-Emitter Breakdown Voltage I =10mA, I =0 20 V CEO C B BV Emitter-Base Breakdown Voltage I =100μA, I =0 5 V EBO E C I Collector Cut-off Current V =25V, I =0 0.1 μA CBO CB E I Emitter Cut-off Current V =3V, I =0 0.1 μA EBO EB C h DC Current Gain V =1V, I =0.1A 40 400 FE CE C V (sat) Collector-Emitter Saturation Voltage I =0.5A, I =50mA 0.18 0.4 V CE C B h Classification FE Classification R O Y G h 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 FE ©2001 Rev. A1, June 2001
