KSD2058YTU ,NPN Epitaxial Silicon TransistorKSD2058KSD2058Low Frequency Power AmplifierTO-220F11.Base 2.Collector 3.EmitterNPN Epitaxial ..
KSD261 ,NPN Epitaxial Silicon TransistorKSD261KSD261Low Frequency Power Amplifier• Complement to KSA643• Collector Power Dissipation : P =5 ..
KSD261 ,NPN Epitaxial Silicon TransistorKSD261KSD261Low Frequency Power Amplifier• Complement to KSA643• Collector Power Dissipation : P =5 ..
KSD288YTU ,NPN Epitaxial Silicon TransistorKSD288KSD288Power Regulator Low Frequency High Power Amplifier Collector-Base Voltage : V =80VCBO ..
KSD288YTU ,NPN Epitaxial Silicon TransistorKSD288KSD288Power Regulator Low Frequency High Power Amplifier Collector-Base Voltage : V =80VCBO ..
KSD288-YTU ,NPN Epitaxial Silicon TransistorKSD288KSD288Power Regulator Low Frequency High Power Amplifier Collector-Base Voltage : V =80VCBO ..
L9615D ,CAN BUS TRANSCEIVERELECTRICAL CHARACTERISTICS (T = -40 to 110°C; V = 4.5 to 5.5V; Dominat: VTXO = GND; Re-OP Scessive: ..
L9615D013TR ,CAN BUS TRANSCEIVERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Supply Voltage -0.3 to 7 VSVC_H, VC_L Bus Volt ..
L9616D ,HIGH SPEED CAN BUS TRANSCEIVERELECTRICAL CHARACTERISTICS (T = -40 to 125°C; V = 4.5 to 5.5V; Dominat: VTXO = GND; Re-OP Scessive: ..
L9616-TR ,HIGH SPEED CAN BUS TRANSCEIVERELECTRICAL CHARACTERISTICS (T = -40 to 125°C; V = 4.5 to 5.5V; Dominat: VTXO = GND; Re-OP Scessive: ..
L9637D ,ISO INTERFACEelectrical characteristics are valid within the below defined op-erating conditions, unless otherwi ..
L9637D013TR ,ISO INTERFACEelectrical characteristics are valid within the below defined op-erating conditions, unless otherwi ..
KSD2058YTU
NPN Epitaxial Silicon Transistor
KSD2058 KSD2058 Low Frequency Power Amplifier TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current 3 A C I Base Current 0.5 A B P Collector Dissipation (T =25°C) 1.5 W C a P Collector Dissipation (T =25°C) 25 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = 60V, I = 0 10 μA CBO CB E I Emitter Cut-off Current V = 7V, I = 0 1 mA EBO EB C V Collector-Emitter Breakdown Voltage I = 50mA, I = 0 60 V CEO C B h DC Current Gain V = 5V, I = 0.5A 8 FE CE C V (Sat) Collector-Emitter Saturation Voltage I = 2A, I = 0.2A 1.5 V CE C B V (on) Base-Emitter ON Voltage V = 5V, I = 0.5A 3 V BE CE C f Current Gain Bandwidth Product V = 5V, I = 0.5A 0.4 MHz T CE C C Output Capacitance V = 10V, f = 1MHz 35 pF ob CB t Turn ON Time V = 30V, I = 2A 0.65 μs ON CC C I = - I = 0.2A t Storage Time B1 B2 1.3 μs STG R = 15Ω L t Fall Time 0.65 μs F h Classification FE Classification O Y G h 60 ~ 120 100 ~ 200 150 ~ 300 FE ©2000 Fairchild Semiconductor International Rev. A, February 2000
