KSD1691OS ,NPN Epitaxial Silicon TransistorKSD1691KSD1691Feature Low Collector-Emtter Saturation Voltage & Large Collector Current High Powe ..
KSD1691YSTU ,NPN Epitaxial Silicon TransistorKSD1691KSD1691Feature Low Collector-Emtter Saturation Voltage & Large Collector Current High Powe ..
KSD1691YSTU ,NPN Epitaxial Silicon TransistorKSD1691KSD1691Feature Low Collector-Emtter Saturation Voltage & Large Collector Current High Powe ..
KSD2012YTU ,NPN Epitaxial Silicon TransistorKSD2012KSD2012Low Frequency Power Amplifier Complement to KSB1366TO-220F11.Base 2.Collector ..
KSD2058YTU ,NPN Epitaxial Silicon TransistorKSD2058KSD2058Low Frequency Power AmplifierTO-220F11.Base 2.Collector 3.EmitterNPN Epitaxial ..
KSD261 ,NPN Epitaxial Silicon TransistorKSD261KSD261Low Frequency Power Amplifier• Complement to KSA643• Collector Power Dissipation : P =5 ..
L9610C ,PWM POWER MOS CONTROLLERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Max. Supply Voltage 26 VSTransient Peak Supply ..
L9613 ,DATA INTERFACEelectrical characteristics are valid within the below definedOperating Conditions, unless otherwise ..
L9613 ,DATA INTERFACEABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Supply Voltage -24 to +36 VSISO transient t ≤ ..
L9613B ,DATA INTERFACEelectrical characteristics are valid within the below definedOperating Conditions, unless otherwise ..
L9613B013TR ,DATA INTERFACEELECTRICAL CHARACTERISTICS (continued)Symbol Parameter Test Condition Min. Typ. Max. UnitC Internal ..
L9613B013TR ,DATA INTERFACEL9613B®DATA INTERFACEOPERATING POWER SUPPLY VOLTAGERANGE 4.8V ≤ V ≤ 36V (40V FOR TRAN-SSIENTS)REVER ..
KSD1691OS-KSD1691YSTU
NPN Epitaxial Silicon Transistor
KSD1691 KSD1691 Feature Low Collector-Emtter Saturation Voltage & Large Collector Current High Power Dissipation: P = 1.3W (T =25°C) C a Complementary to KSB1151 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current (DC) 5 A C I *Collector Current (Pulse) 8 A CP I Base Current (DC) 1 A B P Collector Dissipation (T =25°C) 1.3 W C a P Collector Dissipation (T =25°C) 20 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG * PW≤10ms, duty Cycle≤50% Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = 50V, I = 0 10 μA CBO CB E I Emitter Cut-off Current V = 7V, I = 0 10 μA EBO EB C h *DC Current Gain V = 1V, I = 0.1A 60 FE1 CE C h V = 1V, I = 2A 100 400 FE2 CE C h V = 1V, I = 5A 50 FE3 CE C V (sat) *Collector-Emitter Saturation Voltage I = 2A, I = 0.2A 0.1 0.3 V CE C B V (sat) *Base-Emitter Saturation Voltage I = 2A, I = 0.2A 0.9 1.2 V BE C B t Turn ON Time V = 10V, I = 2A 0.2 1 μs ON CC C I = - I = 0.2A t Storage Time B1 B2 1.1 2.5 μs STG R = 5Ω L t Fall Time 0.2 1 μs F * Pulse test: PW≤50μs, duty Cycle≤2% Pulsed h Classificntion FE Classification O Y G h 100 ~ 200 160 ~ 320 200 ~ 400 FE 2 ©2000 Fairchild Semiconductor International Rev. A, February 2000
