KSD1621 ,NPN Epitaxial Silicon TransistorKSD1621KSD1621High Current Driver
KSD1621 ,NPN Epitaxial Silicon TransistorApplications• Low Collector-Emitter Saturation Voltage• Large Current Capacity and Wide SOA• Fast S ..
KSD1621STF ,NPN Epitaxial Silicon TransistorKSD1621KSD1621High Current Driver
KSD1621UTF ,NPN Epitaxial Silicon TransistorApplications• Low Collector-Emitter Saturation Voltage• Large Current Capacity and Wide SOA• Fast S ..
KSD1691 ,60 V, 5 A, NPN epitaxial silicon transistor
KSD1691 ,60 V, 5 A, NPN epitaxial silicon transistor
L9524C ,Glow plug system control ICBlock diagram . . . . 5Figure 2. Pin connection (top view) . . . 6Figure 3. Shunt sens ..
L9524C-TR ,Glow plug system control ICFeatures■ Quad gate driver for external N-channel Power MOSFETs in high-side configuration:– Gates ..
L9610C ,PWM POWER MOS CONTROLLERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Max. Supply Voltage 26 VSTransient Peak Supply ..
L9613 ,DATA INTERFACEelectrical characteristics are valid within the below definedOperating Conditions, unless otherwise ..
L9613 ,DATA INTERFACEABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Supply Voltage -24 to +36 VSISO transient t ≤ ..
L9613B ,DATA INTERFACEelectrical characteristics are valid within the below definedOperating Conditions, unless otherwise ..
KSD1621
NPN Epitaxial Silicon Transistor
KSD1621 KSD1621 High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 SOT-89 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current 2 A C P Collector Power Dissipation 500 mW C P * 1.3 W C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG 2 * Mounted on Ceramic Board (250mm x0.8mm) Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =10μA, I =0 30 V CBO C E BV Collector-Emitter Breakdown Voltage I =1mA, I =0 25 V CEO C B BV Emitter-Base Breakdown Voltage I =10μA, I =0 6 V EBO E C I Collector Cut-off Current V =20V, I =0 100 nA CBO CB E I Emitter Cut-off Current V =4V, I =0 100 nA EBO BE C h DC Current Gain V =2V, I =0.1A 100 560 FE1 CE C h V =2V, I =1.5A 65 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I =1.5A, I =75mA 0.18 0.4 V CE C B V (sat) Base-Emitter Saturation Voltage I =1.5A, I =75mA 0.85 1.2 V BE C B f Current Gain Bandwidth product V =10V, I =50mA 150 MHz T CE C C Output Capacitance V =10V, I =0, f=1MHz 19 pF ob CB E t * Turn On Time V =12V, V =5V 60 ns ON CC BE I = -I =25mA t * Storage Time B1 B2 500 ns STG I =0.5A, R =25Ω C L t * Fall Time 25 ns F * Pulse Width=20μs, Duty Cycle≤1% h Classification FE Classification R S T U h 100 ~ 200 140 ~ 280 200 ~ 400 280 ~ 560 FE Marking SYX h grade FE ©2001 Rev. A1, June 2001
