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KSD1589YTUFAIRCHILDN/a800avaiNPN Silicon Darlington Transistor


KSD1589YTU ,NPN Silicon Darlington TransistorKSD1589KSD1589Low Frequency Power AmplifierLow Speed Switching Industrial Use Complement to KSB109 ..
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KSD1589YTU
NPN Silicon Darlington Transistor
KSD1589 KSD1589 Low Frequency Power Amplifier Low Speed Switching Industrial Use  Complement to KSB1098 TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units Equivalent Circuit C V Collector-Base Voltage 150 V CBO V Collector-Emitter Voltage 100 V CEO V Emitter-Base Voltage 7 V EBO B I Collector Current (DC) 5 A C I *Collector Current (Pulse) 8 A CP I Base Current 0.5 A B P Collector Dissipation (T =25°C) 1.5 W C a R1 R2 Collector Dissipation (T =25°C) 20 W C E R18 ≅ kΩ T Junction Temperature 150 °C J R20 ≅ .12kΩ T Storage Temperature - 55 ~ 150 °C STG * PW≤10ms, Duty Cycle≤50% Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = 100V, I = 0 1 μA CBO CB E h *DC Current Gain V = 2V, I = 3A 2K 6K 15K FE1 CE C h V = 2V, I = 5A 500 FE2 CE C V (sat) *Collector-Emitter Saturation Voltage I = 3A, I = 3mA 0.9 1.5 V CE C B V (sat) Base-Emitter Saturation Voltage I = 3A, I = 3mA 1.6 2 V BE C B ⋅ t Turn On Time V = 50V, I = 3A 1 μs ON CC ⋅ C I = - I = 3mA t Storage Time B1 B2 3.5 μs stg R = 16.7Ω L t Fall Time 1.2 μs f * Pulse Test: PW≤350μs, Duty Cycle≤2% Pulsed h Classification FE Classification R O Y h 2000 ~ 5000 3000 ~ 7000 5000 ~ 15000 FE1 ©2003 Rev. B, September 2003
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