KSD1408YTU ,NPN Epitaxial Silicon TransistorApplications Complement to KSB1017TO-220F11.Base 2.Collector 3.EmitterNPN Epitaxial Silicon ..
KSD1408YTU ,NPN Epitaxial Silicon TransistorKSD1408KSD1408Power Amplifier
KSD1589YTU ,NPN Silicon Darlington TransistorKSD1589KSD1589Low Frequency Power AmplifierLow Speed Switching Industrial Use Complement to KSB109 ..
KSD1616A ,NPN Epitaxial Silicon TransistorKSD1616/1616AKSD1616/1616AAudio Frequency Power Amplifier & Medium Speed Switching• Complement to K ..
KSD1616A ,NPN Epitaxial Silicon TransistorKSD1616/1616AKSD1616/1616AAudio Frequency Power Amplifier & Medium Speed Switching• Complement to K ..
KSD1616A-G , NPN Silicon Epitaxial Transistors
L9468 ,Alternator voltage regulator with protected diagnostic lamp driverAbsolute Maximum RatingsSymbol Parameter Value UnitV Thermal Supply Voltage (load dump) 40 VSI Outp ..
L9468N ,Alternator voltage regulator with protected diagnostic lamp driverFeatures■ FULLY MONOLITHIC DESIGN■ HIGH SIDE FIELD DRIVE■ THERMAL PROTECTION■ FIELD DRIVER SHORT CI ..
L9473 ,CAR ALTERNATOR VOLTAGE REGULATORBlock DiagramNTC4 178263Rev. 1May 2005 1/9L9473 Table 2. PIN DESCRIPTIONN° Pin Description1V Gener ..
L9474 , ALL SILICON VOLTAGE REGULATOR
L9484 ,CAR ALTERNATOR VOLTAGE REGULATORABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitOutput Current Capability INTERNALLY LIMITED APo ..
L9524C ,Glow plug system control ICBlock diagram . . . . 5Figure 2. Pin connection (top view) . . . 6Figure 3. Shunt sens ..
KSD1408YTU
NPN Epitaxial Silicon Transistor
KSD1408 KSD1408 Power Amplifier Applications Complement to KSB1017 TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 80 V CBO V Collector-Emitter Voltage 80 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 4 A C I Base Current 0.4 A B P Collector Dissipation (T =25°C) 25 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I = 50mA, I = 0 80 V CEO C B I Collector Cut-off Current V = 80V, I = 0 30 μA CBO CB E I Emitter Cut-off Current V = 5V, I = 0 100 μA EBO EB C h DC Current Gain V = 5V, I = 0.5A 40 240 FE1 CE C h V = 5V, I = 3A 15 50 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = 3A. I = 0.3A 0.45 1.5 V CE C B V (on) Base-Emitter On Voltage V = 5V, I = 3A 1 1.5 V BE CE C f Current Gain Bandwidth Product V = 5V, I = 0.5A 8 MHz T CE C C Output Capacitance V = 10V, f = 1MHz 90 pF ob CB h Classification FE1 Classification R O Y h 40 ~ 80 70 ~ 140 120 ~ 240 FE1 ©2000 Fairchild Semiconductor International Rev. A, February 2000
