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KSD1222TUFAIN/a600avaiNPN Epitaxial Silicon Transistor


KSD1222TU ,NPN Epitaxial Silicon TransistorApplications• High DC Current Gain• Low Collector-Emitter Saturation Voltage• Built in a Damper Dio ..
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KSD1222TU
NPN Epitaxial Silicon Transistor
KSD1222 KSD1222 Power Amplifier Applications • High DC Current Gain • Low Collector-Emitter Saturation Voltage • Built in a Damper Diode at E-C • Darlington TR • Complement to KSB907 1 I-PAK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 3 A C I Base Current 0.3 A B P Collector Dissipation (T =25°C) 15 W C C Collector Dissipation (T =25°C) 1 W a T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I = 25mA, I = 0 40 V CEO C B I Collector Cut-off Current V = 60V, I = 0 20 μA CBO CB E I Emitter Cut-off Current V = 5V, I = 0 2.5 mA EBO EB C h DC Current Gain V = 2V, I = 1A 2000 FE1 CE C h V = 2V, I = 3A 1000 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = 2A, I = 4mA 1.5 V CE C B V (sat) Base-Emitter Saturation Voltage I = 2A, I = 4mA 2 V BE C B t Turn On Time V = 30V, I = 3A 0.1 μs ON CC C I = -I = 6mA t Storage Time B1 B2 1 μs STG R = 10Ω L t Fall Time 0.2 μs F ©2001 Rev. A1, January 2001
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