KSC945O ,Audio Frequency Amplifier & High Frequency OSC.KSC945KSC945Audio Frequency Amplifier & High Frequency OSC.• Complement to KSA733• Collector-Base V ..
KSC945-O ,Audio Frequency Amplifier & High Frequency OSC.KSC945KSC945Audio Frequency Amplifier & High Frequency OSC.• Complement to KSA733• Collector-Base V ..
KSC945-Y ,Audio Frequency Amplifier & High Frequency OSC.KSC945KSC945Audio Frequency Amplifier & High Frequency OSC.• Complement to KSA733• Collector-Base V ..
KSC945-Y ,Audio Frequency Amplifier & High Frequency OSC.KSC945KSC945Audio Frequency Amplifier & High Frequency OSC.• Complement to KSA733• Collector-Base V ..
KSC945YBU ,NPN Epitaxial Silicon TransistorKSC945KSC945Audio Frequency Amplifier & High Frequency OSC.• Complement to KSA733• Collector-Base V ..
KSC945YTA ,NPN Epitaxial Silicon TransistorKSC945KSC945Audio Frequency Amplifier & High Frequency OSC.• Complement to KSA733• Collector-Base V ..
L9351 ,HIGH SIDE DRIVERL9351HIGH SIDE DRIVERADVANCE DATA. LOW SATURATION VOLTAGE. TTL COMPATIBLE INPUT. WIDE SUPPLY VOLTAG ..
L9352B ,INTELLIGENT QUAD (2X5A/2X2.5A) LOW-SIDE SWITCHL9352BINTELLIGENT QUAD (2X5A/2X2.5A) LOW-SIDE SWITCH■ L9352B Quad low-side switch■ 2 x 5A designed ..
L9362 ,QUAD LOW SIDE DRIVERL9362QUAD LOW SIDE DRIVER■ QUAD LOW-SIDE DRIVER FOR AUTOMO-TIVE APPLICATION■ CURRENT FEEDBACK OUTPU ..
L9362013TR ,QUAD LOW SIDE DRIVERBLOCK DIAGRAMVCCVCCROLVCC==TriggerOUT1NON1dV/dtDriverControlS=Reset OUT2NON2ROUT3Overtemp.NON3NON1O ..
L9363 ,QUAD INTEGRATED LOW SIDE DRIVERBLOCK DIAGRAM
L V 15 ‘15:: DQRINA
_ 141;: ouma
A ) 13 ii: 1N3
12 1:: m
1:i:'---n ; INLEvAl
12 ..
L9380 ,TRIPLE HIGH-SIDE MOSFET DRIVERELECTRICAL CHARACTERISTICS (7V ≤ V ≤ 18.5V; -40°C ≤ T ≤ 150°C, unless otherwise specified.)S JSymbo ..
KSC945CG-KSC945CO-KSC945CY-KSC945G-KSC945-G-KSC945O-KSC945-O-KSC945-Y
Audio Frequency Amplifier & High Frequency OSC.
KSC945 KSC945 Audio Frequency Amplifier & High Frequency OSC. • Complement to KSA733 • Collector-Base Voltage : V =60V CBO • High Current Gain Bandwidth Product : f =300MHz (TYP) T • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 150 mA C P Collector Power Dissipation 250 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 60 V CBO C E BV Collector-Emitter Breakdown Voltage I =10mA, I =0 50 V CEO C B BV Emitter-Base Breakdown Voltage I =10μA, I =0 5 V EBO E C I Collector Cut-off Current V =40V, I =0 0.1 μA CBO CB E I Emitter Cut-off Current V =3V, I =0 0.1 μA EBO EB C h DC Current Gain V =6V, I =1.0mA 40 700 FE CE C V (sat) Collector-Emitter Saturation Voltage I =100mA, I =10mA 0.15 0.3 V CE C B f Current Gain Bandwidth Product V =6V, I =10mA 300 MHz T CE C C Output Capacitance V =6V, I =0, f=1MHz 2.5 pF ob CB E NF Noise Figure V =6V, I =0.5mA 4.0 dB CE C f=1KHz, R =500Ω S h Classification FE Classification R O Y G L h 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700 FE ©2002 Rev. A2, September 2002
