KSC945CYBU ,NPN Epitaxial Silicon TransistorKSC945KSC945Audio Frequency Amplifier & High Frequency OSC.• Complement to KSA733• Collector-Base V ..
KSC945CYTA ,NPN Epitaxial Silicon TransistorKSC945KSC945Audio Frequency Amplifier & High Frequency OSC.• Complement to KSA733• Collector-Base V ..
KSC945C-YTA ,NPN Epitaxial Silicon TransistorKSC945KSC945Audio Frequency Amplifier & High Frequency OSC.• Complement to KSA733• Collector-Base V ..
KSC945G ,Audio Frequency Amplifier & High Frequency OSC.KSC945KSC945Audio Frequency Amplifier & High Frequency OSC.• Complement to KSA733• Collector-Base V ..
KSC945-G ,Audio Frequency Amplifier & High Frequency OSC.KSC945KSC945Audio Frequency Amplifier & High Frequency OSC.• Complement to KSA733• Collector-Base V ..
KSC945O ,Audio Frequency Amplifier & High Frequency OSC.KSC945KSC945Audio Frequency Amplifier & High Frequency OSC.• Complement to KSA733• Collector-Base V ..
L9346PD ,QUAD INTELLIGENT POWER LOW SIDE SWITCHL9346®QUAD INTELLIGENT POWER LOW SIDE SWITCHQUAD POWER LOW SIDE DRIVER WITH 2 x 5AAND 2 x 3A OUTPUT ..
L9347 ,INTELLIGENT QUAD (2X5A/2X2.5A ) LOW-SIDE SWITCHL9347INTELLIGENT QUAD (2X5A/2X2.5A) LOW-SIDE SWITCH■ Quad low-side switch■ 2 x 5A designed as conve ..
L9348 ,QUAD LOW SIDE DRIVERBlock DiagramVSVoltage RegulatorVS+VREG–=V VDD CCC 166kHz ENQ1V VDDSIN1ENFAIL ‡ 1OLSCPPGND1VREGTSD5 ..
L9349 ,QUAD INTELLIGENT POWER LOW SIDE SWITCHL9349QUAD INTELLIGENT POWER LOW SIDE SWITCH■ Quad power low side driver with 2 x 5A and 2 x 3A outp ..
L9349-LF ,four channel valve driverElectrical characteristics . . . . . . . 83.5 Diagnostic . 103.6 Circuit description ..
L9349TR-LF ,four channel valve driverL9349-LFQuad intelligent power low side switch■ Four low-side output driver with protection diagnos ..
KSC945C-GTA-KSC945CYBU-KSC945CYTA-KSC945C-YTA-KSC945YBU-KSC945YTA
NPN Epitaxial Silicon Transistor
KSC945 KSC945 Audio Frequency Amplifier & High Frequency OSC. • Complement to KSA733 • Collector-Base Voltage : V =60V CBO • High Current Gain Bandwidth Product : f =300MHz (TYP) T • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 150 mA C P Collector Power Dissipation 250 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 60 V CBO C E BV Collector-Emitter Breakdown Voltage I =10mA, I =0 50 V CEO C B BV Emitter-Base Breakdown Voltage I =10μA, I =0 5 V EBO E C I Collector Cut-off Current V =40V, I =0 0.1 μA CBO CB E I Emitter Cut-off Current V =3V, I =0 0.1 μA EBO EB C h DC Current Gain V =6V, I =1.0mA 40 700 FE CE C V (sat) Collector-Emitter Saturation Voltage I =100mA, I =10mA 0.15 0.3 V CE C B f Current Gain Bandwidth Product V =6V, I =10mA 300 MHz T CE C C Output Capacitance V =6V, I =0, f=1MHz 2.5 pF ob CB E NF Noise Figure V =6V, I =0.5mA 4.0 dB CE C f=1KHz, R =500Ω S h Classification FE Classification R O Y G L h 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700 FE ©2002 Rev. A2, September 2002
