KSC5504DTTU ,NPN Triple Diffused Planar Silicon TransistorKSC5504D/KSC5504DTKSC5504D/KSC5504DTD2-PAKEquivalent CircuitHigh Voltage High Speed Power Switch CA ..
KSC5603D ,NPN Silicon Transistor Planar Silicon TransistorElectrical Characteristics T =25°C unless otherwise notedCSymbol Parameter Test Condition Min. Typ. ..
KSC5802 ,High Voltage Color Display Horizontal Deflection Output (No Damper Diode)KSC5802KSC5802High Voltage Color Display Horizontal Deflection Output(No Damper Diode) High Breakd ..
KSC815O , Low Frequency Amplifier & High Frequency Oscillator
KSC815-O , Low Frequency Amplifier & High Frequency Oscillator
KSC815Y , Low Frequency Amplifier & High Frequency Oscillator
L9305A ,DUAL HIGH CURRENT RELAY DRIVERblock diagram unless otherwise5 ambspecified)Symbol Parameter Test Conditions Min. Typ. Max. UnitV5 ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERBLOCK DIAGRAMOctober 1990 1/7This is advanced information on a new product now in development or un ..
L9332 ,Quad Intelligent Power Low Side SwitchFeaturesThe L9332 is a monolithic integrated quad low A Quad power low side driver with 3output s ..
L9333MD ,QUAD LOW SIDE DRIVERL9333QUAD LOW SIDE DRIVER■ WIDE OPERATING SUPPLY VOLTAGE MULTIPOWER BCD TECHNOLOGYRANGE FROM 4.5V U ..
KSC5504DTM-KSC5504DTTU
NPN Triple Diffused Planar Silicon Transistor
KSC5504D/KSC5504DT KSC5504D/KSC5504DT D2-PAK Equivalent Circuit High Voltage High Speed Power Switch C Application 1 • Wide Safe Operating Area TO-220 • Built-in Free-Wheeling Diode B • Suitable for Electronic Ballast Application • Small Variance in Storage Time • Two Package Choices : D2-PAK or TO-220 E 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 1200 V CBO V Collector-Emitter Voltage 600 V CEO V Emitter-Base Voltage 12 V EBO I Collector Current (DC) 4 A C I *Collector Current (Pulse) 8 A CP I Base Current (DC) 2 A B I *Base Current (Pulse) 4 A BP P Collector Dissipation (T =25°C) 75 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG E Avalanche Energy(T =25°C) 3 mJ AS j * Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10% Thermal Characteristics T =25°C unless otherwise noted C Symbol Characteristics Rating Unit R Thermal Resistance Junction to Case 1.65 °C/W θjc R Junction to Ambient 62.5 θja T Maximun Lead Temperature for Soldering Purpose 270 °C L : 1/8” from Case for 5 seconds ©2001 Rev. A1, June 2001
