KSC5502D ,NPN Triple Diffused Planar Silicon TransistorElectrical Characteristics T =25°C unless otherwise notedCSymbol Parameter Test Condition Min. Typ. ..
KSC5502DTM ,NPN Triple Diffused Planar Silicon TransistorElectrical Characteristics T =25°C unless otherwise notedCSymbol Parameter Test Condition Min. Typ. ..
KSC5504DTM ,NPN Triple Diffused Planar Silicon TransistorElectrical Characteristics T =25°C unless otherwise notedCSymbol Parameter Test Condition Min. Typ. ..
KSC5504DTTU ,NPN Triple Diffused Planar Silicon TransistorKSC5504D/KSC5504DTKSC5504D/KSC5504DTD2-PAKEquivalent CircuitHigh Voltage High Speed Power Switch CA ..
KSC5603D ,NPN Silicon Transistor Planar Silicon TransistorElectrical Characteristics T =25°C unless otherwise notedCSymbol Parameter Test Condition Min. Typ. ..
KSC5802 ,High Voltage Color Display Horizontal Deflection Output (No Damper Diode)KSC5802KSC5802High Voltage Color Display Horizontal Deflection Output(No Damper Diode) High Breakd ..
L9305A ,DUAL HIGH CURRENT RELAY DRIVERblock diagram unless otherwise5 ambspecified)Symbol Parameter Test Conditions Min. Typ. Max. UnitV5 ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERBLOCK DIAGRAMOctober 1990 1/7This is advanced information on a new product now in development or un ..
L9332 ,Quad Intelligent Power Low Side SwitchFeaturesThe L9332 is a monolithic integrated quad low A Quad power low side driver with 3output s ..
L9333MD ,QUAD LOW SIDE DRIVERL9333QUAD LOW SIDE DRIVER■ WIDE OPERATING SUPPLY VOLTAGE MULTIPOWER BCD TECHNOLOGYRANGE FROM 4.5V U ..
KSC5502D
NPN Triple Diffused Planar Silicon Transistor
KSC5502D/KSC5502DT KSC5502D/KSC5502DT D-PAK Equivalent Circuit High Voltage Power Switch Switching C Application 1 • Wide Safe Operating Area • Built-in Free-Wheeling Diode TO-220 B • Suitable for Electronic Ballast Application • Small Variance in Storage Time • Two Package Choices : D-PAK or TO-220 E 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 1200 V CBO V Collector-Emitter Voltage 600 V CEO V Emitter-Base Voltage 12 V EBO I Collector Current (DC) 2 A C I *Collector Current (Pulse) 4 A CP I Base Current (DC) 1 A B I *Base Current (Pulse) 2 A BP P Collector Dissipation (T =25°C) 50 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG EAS Avalanche Energy(T =25°C) 2.5 mJ j * Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10% Thermal Characteristics T =25°C unless otherwise noted C Symbol Characteristics Rating Unit R Thermal Resistance Junction to Case 2.5 °C/W θjc R Junction to Ambient 62.5 θja T Maximun Lead Temperature for Soldering Purpose 270 °C L : 1/8” from Case for 5 seconds ©2001 Rev. A2, August 2001
