KSC5402DTTU ,NPN Silicon Transistor Planar Silicon TransistorElectrical Characteristics T =25°C unless otherwise notedCSymbol Parameter Test Condition Min. Typ. ..
KSC5502D ,NPN Triple Diffused Planar Silicon TransistorElectrical Characteristics T =25°C unless otherwise notedCSymbol Parameter Test Condition Min. Typ. ..
KSC5502DTM ,NPN Triple Diffused Planar Silicon TransistorElectrical Characteristics T =25°C unless otherwise notedCSymbol Parameter Test Condition Min. Typ. ..
KSC5504DTM ,NPN Triple Diffused Planar Silicon TransistorElectrical Characteristics T =25°C unless otherwise notedCSymbol Parameter Test Condition Min. Typ. ..
KSC5504DTTU ,NPN Triple Diffused Planar Silicon TransistorKSC5504D/KSC5504DTKSC5504D/KSC5504DTD2-PAKEquivalent CircuitHigh Voltage High Speed Power Switch CA ..
KSC5603D ,NPN Silicon Transistor Planar Silicon TransistorElectrical Characteristics T =25°C unless otherwise notedCSymbol Parameter Test Condition Min. Typ. ..
L9305A ,DUAL HIGH CURRENT RELAY DRIVERblock diagram unless otherwise5 ambspecified)Symbol Parameter Test Conditions Min. Typ. Max. UnitV5 ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERBLOCK DIAGRAMOctober 1990 1/7This is advanced information on a new product now in development or un ..
L9332 ,Quad Intelligent Power Low Side SwitchFeaturesThe L9332 is a monolithic integrated quad low A Quad power low side driver with 3output s ..
L9333MD ,QUAD LOW SIDE DRIVERL9333QUAD LOW SIDE DRIVER■ WIDE OPERATING SUPPLY VOLTAGE MULTIPOWER BCD TECHNOLOGYRANGE FROM 4.5V U ..
KSC5402DTTU
NPN Silicon Transistor Planar Silicon Transistor
KSC5402D/KSC5402DT KSC5402D/KSC5402DT D-PAK High Voltage High Speed Power Switch Equivalent Circuit Application C 1 Wide Safe Operating Area Built-in Free Wheeling Diode TO-220 Suitable for Electronic Ballast Application B Small Variance in Storage Time Two Package Choices; D-PAK or TO-220 1 E 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Planar Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 1000 V CBO V Collector-Emitter Voltage 450 V CEO V Emitter-Base Voltage 12 V EBO I Collector Current (DC) 2 A C I *Collector Current (Pulse) 5 A CP I Base Current (DC) 1 A B I *Base Current (Pulse) 2 A BP P Power Dissipation(T =25°C) : D-PAK * 30 W C C : TO-220 50 T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG * Pulse Test: Pulse Width=5ms, Duty Cycle < 10% Thermal Characteristics T =25°C unless otherwise noted C Rating Unit Symbol Characteristics TO-220 D-PAK R Thermal Resistance Junction to Case 2.5 4.17 * °C/W θjc R Junction to Ambient 62.5 50 θja T Maximum Lead Temperature for Soldering Purpose 270 270 °C L ; 1/8” from Case for 5 Seconds * Mounted on 1” square PCB (FR4 ro G-10 Material) ©2002 Rev. B2, December 2002
