KSC5042FTU ,NPN Triple Diffused Planar Silicon TransistorKSC5042FKSC5042FHigh Voltage Switchihg Dynamic Focus Application High Collector-Emitter Breakdown ..
KSC5042FTU ,NPN Triple Diffused Planar Silicon TransistorKSC5042FKSC5042FHigh Voltage Switchihg Dynamic Focus Application High Collector-Emitter Breakdown ..
KSC5042F-YDTU ,NPN Triple Diffused Planar Silicon TransistorKSC5042FKSC5042FHigh Voltage Switchihg Dynamic Focus Application High Collector-Emitter Breakdown ..
KSC5042MSTU ,NPN Triple Diffused Planar Silicon TransistorKSC5042MKSC5042MHigh Voltage Switchihg Dynamic Focus Application High Collector-Emitter Breakdown ..
KSC5305DTU ,NPN Silicon TransistorApplications• No need to interest an hFE value because of low variable storage-time Bspread even t ..
KSC5402DTTU ,NPN Silicon Transistor Planar Silicon TransistorElectrical Characteristics T =25°C unless otherwise notedCSymbol Parameter Test Condition Min. Typ. ..
L9305A ,DUAL HIGH CURRENT RELAY DRIVERblock diagram unless otherwise5 ambspecified)Symbol Parameter Test Conditions Min. Typ. Max. UnitV5 ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERBLOCK DIAGRAMOctober 1990 1/7This is advanced information on a new product now in development or un ..
L9332 ,Quad Intelligent Power Low Side SwitchFeaturesThe L9332 is a monolithic integrated quad low A Quad power low side driver with 3output s ..
L9333MD ,QUAD LOW SIDE DRIVERL9333QUAD LOW SIDE DRIVER■ WIDE OPERATING SUPPLY VOLTAGE MULTIPOWER BCD TECHNOLOGYRANGE FROM 4.5V U ..
KSC5042FTU-KSC5042F-YDTU
NPN Triple Diffused Planar Silicon Transistor
KSC5042F KSC5042F High Voltage Switchihg Dynamic Focus Application High Collector-Emitter Breakdown Voltage : BV =900V CEO Small C =2.8pF (Typ.) ob Wide S.O.A High reliability TO-220F 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 1500 V CBO V Collector-Emitter Voltage 900 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 100 mA C I Collector Current (Pulse) 300 mA CP P Collector Dissipation (T =25°C) 6 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = 1mA, I = 0 1500 V CBO C E BV Collector-Emitter Breakdown Voltage I = 5mA, I = 0 900 V CEO C B BV Emitter-Base Breakdown Voltage I = 1mA, I = 0 5 V EBO E C I Collector Cut-off Current V = 900V, I = 0 10 μA CBO CB E I Emitter Cut-off Current V = 4V, I = 0 10 μA EBO EB C h DC Current Gain V = 5V, I = 10mA 30 FE CE C V (sat) Collector-Emitter Saturation Voltage I = 20mA, I = 4mA 5 V CE C B V (sat) Base-Emitter Saturation Voltage I = 20mA, I = 4mA 2 V BE C B C Output Capacitance V = 100V, f = 1MHz 2.8 pF ob CB ©2002 Rev. B, December 2002
