KSC5039FTU ,NPN Planar Silicon TransistorKSC5039FKSC5039FHigh Voltage Power Switch Switching ApplicationTO-220F11.Base 2.Collector 3.E ..
KSC5042F ,NPN Triple Diffused Planar Silicon TransistorKSC5042FKSC5042FHigh Voltage Switchihg Dynamic Focus Application High Collector-Emitter Breakdown ..
KSC5042FTU ,NPN Triple Diffused Planar Silicon TransistorKSC5042FKSC5042FHigh Voltage Switchihg Dynamic Focus Application High Collector-Emitter Breakdown ..
KSC5042FTU ,NPN Triple Diffused Planar Silicon TransistorKSC5042FKSC5042FHigh Voltage Switchihg Dynamic Focus Application High Collector-Emitter Breakdown ..
KSC5042F-YDTU ,NPN Triple Diffused Planar Silicon TransistorKSC5042FKSC5042FHigh Voltage Switchihg Dynamic Focus Application High Collector-Emitter Breakdown ..
KSC5042MSTU ,NPN Triple Diffused Planar Silicon TransistorKSC5042MKSC5042MHigh Voltage Switchihg Dynamic Focus Application High Collector-Emitter Breakdown ..
L9305A ,DUAL HIGH CURRENT RELAY DRIVERblock diagram unless otherwise5 ambspecified)Symbol Parameter Test Conditions Min. Typ. Max. UnitV5 ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERBLOCK DIAGRAMOctober 1990 1/7This is advanced information on a new product now in development or un ..
L9332 ,Quad Intelligent Power Low Side SwitchFeaturesThe L9332 is a monolithic integrated quad low A Quad power low side driver with 3output s ..
L9333MD ,QUAD LOW SIDE DRIVERL9333QUAD LOW SIDE DRIVER■ WIDE OPERATING SUPPLY VOLTAGE MULTIPOWER BCD TECHNOLOGYRANGE FROM 4.5V U ..
KSC5039FTU
NPN Planar Silicon Transistor
KSC5039F KSC5039F High Voltage Power Switch Switching Application TO-220F 1 1.Base 2.Collector 3.Emitter NPN Planar Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 800 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current (DC) 5 A C I Collector Current (Pulse) 10 A CP I Base Current 3 A B P Collector Dissipation (T =25°C) 30 W C C T Junction Temperature 150 °C J T Storage Temperature -65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = 1mA, I = 0 800 V CBO C E BV Collector-Emitter Breakdown Voltage I = 5mA, I = 0 400 V CEO C B BV Emitter-Base Breakdown Voltage I = 1mA, I = 0 7 EBO C C I Collector Cut-off Current V = 500V, I = 0 10 μA CBO CB E I Emitter Cut-off Current V = 7V, I = 0 10 μA EBO EB C h *DC Current Gain V = 5V, I = 0.3A 10 FE CE C V (sat) *Collector-Emitter Saturation Voltage I = 2.5A, I = 0.5A 1.5 V CE C B V (sat) *Base-Emitter Saturation Voltage I = 2.5A, I = 0.5A 2.0 V BE C B f Current Gain Bandwidth Product V = 5V, I = 0.1A 10 MHz T CE C C Output Capacitance V = 10V , f = 1MHz 40 pF ob CB t Turn ON Time V =150V , I = 2.5A, 1 μs ON CC C I = -I = 0.5A t Storage Time B1 B2 3 μs STG R = 60Ω L t Fall Time 0.8 μs F * Plus test: PW=300μs, Duty Cycle=2% Pulsed ©2000 Fairchild Semiconductor International Rev. A, February 2000
